Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

ABSTRACT

A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron includes positioning the magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying unipolar negative direct current (DC) voltage pulses from a pulse power supply with a pulse forming network (PFN) to a pulse converting network (PCN); and adjusting an amplitude and frequency associated with the plurality of unipolar negative DC voltage pulses causing a resonance mode associated with the PCN. The PCN converts the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron. An increase in amplitude or pulse duration of the plurality of unipolar negative DC voltage pulses causes an increase in the amplitude of a negative voltage of the asymmetric AC signal in response to the PCN being in the resonance mode, thereby causing sputtering discharge associated with the HEDP magnetron to form the layer from the cathode target on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 17/127,527, filed Dec. 18, 2020, which is a continuation-in-partapplication of U.S. application Ser. No. 16/261,514, filed Jan. 29,2019, which is a continuation application of U.S. application Ser. No.15/917,046, filed Mar. 9, 2018, which is a continuation application ofU.S. application Ser. No. 15/261,119, filed Sep. 9, 2016, which claimsthe benefit of U.S. Provisional Application No. 62/270,356, filed Dec.21, 2015, the disclosures of which are incorporated by reference hereinin their entireties. U.S. application Ser. No. 15/260,841 entitled“Capacitive Coupled Plasma Source for Sputtering and Resputtering”, U.S.application Ser. No. 15/260,857 entitled “Electrically and MagneticallyEnhanced Ionized Physical Vapor Deposition Unbalanced SputteringSource”, and U.S. application Ser. No. 15/261,197 entitled “MagneticallyEnhanced Low Temperature-High Density Plasma-Chemical Vapor DepositionPlasma Source for Depositing Diamond and Diamond-Like Films” areincorporated by reference herein in their entireties. U.S. applicationSer. No. 17/127,527, filed Dec. 18, 2020, is a continuation-in-partapplication of U.S. application Ser. No. 16/025,928, filed Jul. 2, 2018,which is a continuation-in-part application of International ApplicationNo. PCT/US17/48438, filed Aug. 24, 2017, which claims the benefit ofU.S. Provisional Application No. 62/482,993, filed Apr. 7, 2017, thedisclosures of which are incorporated by reference herein in theirentireties.

BACKGROUND Field

The disclosed embodiments generally relate to a plasma-enhanced chemicalvapor deposition (PE CVD) apparatus and method and, more particularly,relate to a pulse magnetically enhanced low-temperature high-densityplasma chemical vapor deposition (LT HDP CVD) apparatus and method.

The disclosed embodiments relate to high-power resonance pulsetechnology for advanced thin film layer deposition on any substrate. Thedisclosed embodiments also relate to converting a unipolar negativedirect current (DC) pulse to a high-power resonance asymmetricalternating current (AC) pulse on a magnetron for sputtering advancedthin films on any substrate. The disclosed embodiments generally relateto a high energy density plasma (HEDP) magnetically enhanced sputteringsource and a method for sputtering hard, dense, and smooth thin films ona substrate surface.

Related Art

CVD plasma sources that deposit diamond and diamond-like coatings andfilms use hot filament chemical vapor deposition (HFCVD) andmicrowave-assisted chemical vapor deposition (CVD) techniques. Methodsrequire a high temperature on a substrate and high bias voltage in orderto form a carbon film with a high content of sp3 bonds. Accordingly, newCVD technologies are needed that will allow depositing diamond-likecarbon (DLC) films at much lower temperatures and much lower bias.

SUMMARY

Various embodiments relate to an apparatus, method, and system for pulsemagnetically enhanced high-density plasma chemical vapor deposition (HDPCVD) of thin-film coatings, and in particular, diamond and diamond-likecoatings.

The magnetically enhanced HDP-CVD source includes (a) a hollow cathodetarget assembly connected to a power supply, which can include a pulsedpower supply, variable power direct current (DC) power supply, variablepower alternating current (AC) power supply, radio frequency (RF) powersupply, pulsed RF power supply, high power impulse magnetron sputtering(HIPIMIS) power supply, HIPMIS power supply with an additional pulseforming network (PFN) or pulse converting network (PCN) to generate ahigh-power resonance asymmetric pulsed AC discharge or a combination ofany of these power supplies, (b) an anode that is connected to ground,(c) a gap between a hollow cathode target and an anode, (d) two rows ofpermanent magnets or electromagnets that are positioned on top of eachother in order to generate a cusp magnetic field in the gap between thehollow cathode and the anode, (e) a cathode magnet assembly that can beconfigured to generates magnetic field lines perpendicular to a surfaceof the hollow cathode target, (f) a magnetic coupling between thecathode target magnet assembly and a cusp magnetic field in the gap, (g)a flowing liquid that cools and controls the temperature of the hollowcathode, (h) a cathode magnet assembly that can be configured togenerates magnetic field lines perpendicular to a surface of the hollowcathode target and, concentric with the hollow cathode target, anothermagnet assembly forming a magnetron configuration on the surface of thehollow cathode target, (i) an accelerating grid positioned parallel tothe surface of the hollow cathode target, (j) and a power supplyconnected to the accelerating grid providing voltage for ionacceleration.

The magnetically enhanced CVD source may include (a) a pole piecebetween the two rows of magnets that are exposed to the plasma throughthe gap between the hollow cathode and the anode, (b) a pole piecepositioned on top of a top row of the magnets, (c) a gap in the anodethat exposes a pole piece positioned on top of the top row of magnets tothe plasma, (d) a gas distribution system, (e) an inductor connectedbetween the cathode and ground to eliminate the DC bias generated byimpingement of electrons on the powered cathode, (f) a motor that canrotate a cathode magnet assembly, (g) a power supply connected to a polepiece, and (e) an inductor connected between the pole piece and groundto eliminate the DC bias generated by impingement of electrons on thepowered pole piece and, in some cases, the inductor is connected to thepole piece on one end and to a synchronized electronic switch on theother end and to ground.

The magnetically enhanced CVD source may include (a) a pole piecebetween the two rows of magnets that is not exposed to the plasmathrough the gap between the hollow cathode and the anode protected by ashield, (b) a pole piece positioned on top of a top row of the magnets,(c) a gap in the anode that exposes the shield piece positioned on topof the top row of magnets to the plasma, (d) a gas distribution system,(e) an inductor connected between the cathode and ground, (f) a cathodemagnet assembly, (g) a power supply connected to shield piece, and (h)an inductor connected between the shield piece and ground to eliminatethe DC bias generated by impingement of electrons on the powered shield.

The magnetically enhanced CVD source may include (a) a pole piecebetween the two rows of magnets that is not exposed to the plasmathrough the gap between the hollow cathode and the anode protected by ashield, (b) a pole piece positioned on top of a top row of the magnets,(c) a gap in the anode that exposes the shield piece positioned on topof the top row of magnets to the plasma, (d) a gas distribution system,(e) an inductor connected between the cathode and ground to eliminatethe DC bias generated by the impinging of electrons on the poweredcathode, (f) a cathode magnet assembly, (g) a power supply connected toshield piece, (h) an inductor connected between the shield piece andground to eliminate the DC bias generated by impingement of electrons onthe powered shield, (i) an accelerating grid positioned parallel to thesurface of the hollow cathode target, and (j) a ground power supplyconnected to the accelerating grid providing voltage for ionacceleration.

The magnetically enhanced CVD apparatus includes (a) a magneticallyenhanced CVD source, (b) a vacuum chamber, (c) a substrate holder, (d) asubstrate, (e) a feed gas mass flow controller, and (f) a vacuum pump.

The magnetically enhanced HDP-CVD apparatus may include (a) a DC or RFsubstrate bias power supply, (b) a substrate heater, (c) more than onemagnetically enhanced PVD sources, (d) a gas activation source, (a) anadditional magnet assembly positioned between the magnetically enhancedHDP-CVD plasma source and the substrate holder or positioned below thesubstrate holder. The magnet assembly can be positioned inside oroutside a vacuum chamber.

A method of providing magnetically enhanced HDP-CVD thin film depositionincludes (a) forming a cusp magnetic field in a gap between a hollowcathode and an anode, (b) forming magnetic field lines perpendicular toa bottom surface of the hollow cathode, (c) providing feed gas, (d)applying negative voltage to the cathode target and igniting volumeplasma discharge, (e) and positioning a substrate.

The method of providing magnetically enhanced CVD thin film depositionmay include (a) heating the substrate, (b) applying a bias voltage tothe substrate, (c) applying an RF voltage to the pole piece, (d)applying an RF voltage to the cathode target, and (e) synchronizing theRF voltage applied to the pole piece and RF voltage applied to thecathode target or using a common exciter (CEX) to prevent unwanted beatfrequencies. Two RF generators can be phase-locked together to run atthe same frequency and with a fixed phase relationship between theiroutputs. This locking ensures repeatable RF characteristics within theplasma.

The method of providing magnetically enhanced CVD thin film depositionmay include (a) heating the substrate, (b) applying a bias voltage tothe substrate, (c) applying an RF voltage to the pole piece, (d)applying an RF voltage to the cathode target, (e) synchronizing the RFvoltage applied to the pole piece and RF voltage applied to the cathodetarget or using a common exciter (CEX) to prevent unwanted beatfrequencies, (f) an accelerating grid positioned parallel to the surfaceof the hollow cathode target, and (g) a power supply connected to theaccelerating grid providing voltage for ion acceleration. Two RFgenerators can be phase-locked together to run at the same frequency andwith a fixed phase relationship between their outputs. This lockingensures repeatable RF characteristics within the plasma.

A magnetically enhanced chemical vapor deposition (CVD) apparatusincludes a hollow cathode target assembly; an anode positioned on top ofthe hollow cathode target assembly, thereby forming a gap between theanode and the hollow cathode target assembly; a cathode magnet assembly;two rows of magnets facing each other with the same magnetic fielddirection that generate a cusp magnetic field in the gap and a magneticfield on the hollow cathode surface with the cathode magnet assembly,the magnetic field comprising magnetic field lines that aresubstantially perpendicular to the hollow cathode target assembly; and apole piece positioned between the two rows of magnets and connected to avoltage power supply, the voltage power supply generating a train ofnegative voltage pulses that generates a pulsed electric field in thegap perpendicular to the cusp magnetic field, the electric fieldigniting and sustaining plasma during a pulse of the train of negativevoltage pulses, a frequency, duration and amplitude of the train ofnegative voltage pulses being selected to increase a degree ofionization of feed gas atoms.

The magnetically enhanced CVD sputtering apparatus may include a secondgap positioned inside the anode such that a portion of the magneticfield lines forming the cusp magnetic field cross the gap and terminateon top of a second row of magnets, and a radio frequency (RF) powersupply connected to the hollow cathode target assembly, wherein the RFpower supply generates output voltage with a frequency in a range ofabout 1 MHz to 100 MHz. The power supply may be connected to the hollowcathode target assembly and generate output current in a range of about20 A to 200 A. The magnetically enhanced CVD sputtering apparatus mayinclude a substrate holder, and a substrate bias power supply, whereinthe substrate bias power supply is connected to the substrate holder andgenerates a bias voltage on the substrate in a range of about −10 V to−2000 V. The magnetic field in the gap may be in a range of about 50 Gto 10000 G. The cathode target material may include carbon and/oraluminum.

A method of magnetically enhanced chemical vapor deposition (CVD)sputtering includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly; generating a cusp magnetic fieldin the gap such that magnetic field lines are substantiallyperpendicular to the hollow cathode surface; positioning a pole piece inthe gap connected to a voltage power supply; providing a pulsed DC powerto the cathode target to ignite and sustain volume discharge; generatinga train of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of sputtered targetmaterial atoms.

The method may include positioning a second gap inside the anode suchthat the portion of the magnetic field lines forming the cusp magneticfield crosses the gap and terminate on top of a second row of magnets,and connecting a radio frequency (RF) power supply to the hollow cathodeassembly and generating output voltage with a frequency in a range ofabout 1 MHz to 100 MHz. The voltage power supply can generate outputvoltage in a range of about −100 V to −3000 V. The method may includeconnecting a substrate bias power supply to a substrate holder andgenerating a bias voltage on a substrate in a range of about −10 V to−2000V. The magnetic field in the gap may be in a range of about 50 G to10000 G, and the cathode target material may include carbon and/oraluminum.

A method of magnetically enhanced chemical vapor deposition (CVD)sputtering includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly; generating a cusp magnetic fieldin the gap such that magnetic field lines are substantiallyperpendicular to the hollow cathode surface; positioning a shield piecebetween the gap and the magnets forming the cusp field, connecting theshield piece to a voltage power supply; providing a pulsed DC power tothe cathode target to ignite and sustain volume discharge; generating atrain of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of sputtered targetmaterial atoms.

A method of magnetically enhanced chemical vapor deposition (CVD)sputtering includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly, the cathode magnet assembly canbe two parts including an outer-ring with a perpendicular field, whereinthe cathode target closes the field with the cusp field through the gapand a concentric magnetic assembly forming a magnetron configuration onthe cathode target, the cathode inner magnetic assembly can bestationary or rotating; positioning a shield piece between the gap andthe magnets forming the cusp field, connecting the shield piece to avoltage power supply or grounded; providing a pulsed DC power to thecathode target to ignite and sustain volume discharge; generating atrain of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of sputtered targetmaterial atoms.

A method of magnetically enhanced chemical vapor deposition (CVD)sputtering includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly, the cathode magnet assembly canbe two parts, including an outer-ring with a perpendicular field, thecathode target closing the field with the cusp field through the gap andconcentric magnetic assembly forming a magnetron configuration on thecathode target, the cathode inner magnetic assembly can be stationary orrotating; positioning a shield piece between the gap and the magnetsforming the cusp field, connecting the shield piece to a voltage powersupply or grounded; providing a high-power pulsed resonance asymmetricAC power to the cathode target to ignite and sustain volume discharge;generating an inductively current-driven plasma; and selecting afrequency, duration, and amplitude to optimize the resonance asymmetricAC pulses to increase a degree of ionization of sputtered targetmaterial atoms.

A method of magnetically enhanced chemical vapor deposition (CVD)sputtering includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly; generating a cusp magnetic fieldin the gap such that magnetic field lines are substantiallyperpendicular to the hollow cathode surface; positioning a shield piecebetween the gap and the magnets forming the cusp field, connecting theshield piece to an RF power supply with an inductor to ground toeliminate the DC bias generated by impingement of electrons on thepowered shield, a radio frequency (RF) power supply connected to thehollow cathode target assembly, wherein the RF power supply generatesoutput voltage with a frequency in a range of about 1 MHz to 100 MHz.The power supply may be connected to the hollow cathode target assemblyand generate output current in a range of about 20 A to 200 A. The twoRF power supplies can be the same frequency or different frequencies Ifthe same frequency is used, a common exciter (CEX) can be used toprevent unwanted beat frequencies. Two RF generators can be phase-lockedtogether so that the generators run at the same frequency and with afixed phase relationship between their outputs. This locking ensuresrepeatable RF characteristics within the plasma. The magneticallyenhanced CVD sputtering apparatus may include a substrate holder and asubstrate bias power supply, wherein the substrate bias power supply isconnected to the substrate holder and generates a bias voltage on thesubstrate in a range of about −10 V to −2000 V. The magnetic field inthe gap may be in a range of about 50 G to 10000 G. The cathode targetmaterial may include carbon and/or aluminum.

The magnetically enhanced CVD sputtering apparatus may include a secondgap positioned inside the anode such that a portion of the magneticfield lines forming the cusp magnetic field cross the gap and terminateon top of a second row of magnets, a grounded shield piece positionedbetween the gaps and the magnets forming the cusp field, and a radiofrequency (RF) power supply connected to the hollow cathode targetassembly, wherein the RF power supply generates output voltage with afrequency in a range of about 1 MHz to 100 MHz. The power supply may beconnected to the hollow cathode target assembly and generate outputcurrent in a range of about 20 A to 200 A. The magnetically enhanced CVDsputtering apparatus may include a substrate holder, and a substratebias power supply, wherein the substrate bias power supply is connectedto the substrate holder and generates a bias voltage on the substrate ina range of about −10 V to −2000 V. The magnetic field in the gap may bein a range of about 50 G to 10000 G. The cathode target material mayinclude carbon and/or aluminum.

The magnetically enhanced CVD sputtering apparatus may include a secondgap positioned inside the anode such that a portion of the magneticfield lines forming the cusp magnetic field cross the gap and terminateon top of a second row of magnets, positioning a grounded shield piecebetween the gaps and the magnets forming the cusp field, and a radiofrequency (RF) power supply connected to the hollow cathode targetassembly, wherein the two different RF power supply generates outputvoltage with a frequency in a range of about 1 MHz to 100 MHz. The twoRF power supplies may be connected to the hollow cathode target assemblyby two different frequency matching network and generate output currentin a range of about 20 A to 200 A. The magnetically enhanced CVDsputtering apparatus may include a substrate holder, and a substratebias power supply, wherein the substrate bias power supply is connectedto the substrate holder and generates a bias voltage on the substrate ina range of about −10 V to −2000 V. The magnetic field in the gap may bein a range of about 50 G to 10000 G. The cathode target material mayinclude carbon and/or aluminum.

A method of magnetically enhanced chemical vapor deposition (CVD)plasma-enhanced atomic layer deposition (PE-ALD) includes providing ahollow cathode target assembly; forming a gap between the hollow cathodetarget assembly and an anode; positioning a cathode magnet assembly;generating a cusp magnetic field in the gap such that magnetic fieldlines are substantially perpendicular to the hollow cathode surface;positioning a shield piece between the gap and the magnets forming thecusp field, connecting the shield piece to an RF power supply with aninductor to ground; and a radio frequency (RF) power supply connected tothe hollow cathode target assembly, wherein the RF power supplygenerates output voltage with a frequency in a range of about 1 MHz to100 MHz. The power supply may be connected to the hollow cathode targetassembly and generate output current in a range of about 20 A to 200 A.The two RF power supplies can be the same frequency or differentfrequencies. If the same frequency is used, a common exciter (CEX) canbe used to prevent unwanted beat frequencies, two RF generators can bephase-locked together so that the generators run at the same frequencyand with a fixed phase relationship between their outputs. This lockingensures repeatable RF characteristics within the plasma The magneticallyenhanced CVD plasma-enhanced atomic layer deposition (PE-ALD) apparatusmay include a substrate holder, and a substrate bias power supply,wherein the substrate bias power supply is connected to the substrateholder and generates a bias voltage on the substrate in a range of about−10 V to −2000 V. The magnetic field in the gap may be in a range ofabout 50 G to 10000 G. The cathode target material may include carbonand/or aluminum.

The magnetically enhanced chemical vapor deposition (CVD)plasma-enhanced atomic layer deposition (PE-ALD) apparatus may include asecond gap positioned inside the anode such that a portion of themagnetic field lines forming the cusp magnetic field cross the gap andterminate on top of a second row of magnets, positioning a groundedshield piece between the gaps and the magnets forming the cusp field,and a radio frequency (RF) power supply connected to the hollow cathodetarget assembly, wherein the two different RF power supplies generateoutput voltage with a frequency in a range of about 1 MHz to 100 MHz.The two RF power supplies may be connected to the hollow cathode targetassembly by two different frequency matching networks and generateoutput current in a range of about 20 A to 200 A. The magneticallyenhanced CVD plasma-enhanced atomic layer deposition (PE-ALD) apparatusmay include a substrate holder, and a substrate bias power supply,wherein the substrate bias power supply is connected to the substrateholder and generates a bias voltage on the substrate in a range of about−10 V to −2000 V. The magnetic field in the gap may be in a range ofabout 50 G to 10000 G. The cathode target material may include carbonand/or aluminum.

A method of magnetically enhanced chemical vapor deposition (CVD) plasmathruster includes providing a hollow cathode target assembly; forming agap between the hollow cathode target assembly and an anode; positioninga cathode magnet assembly, the cathode magnet assembly having aperpendicular field to the cathode target closing the field with thecusp field through the gap; positioning a shield piece between the gapand the magnets forming the cusp field; connecting the shield piece to avoltage power supply or grounded; providing pulsed DC power to thecathode target to ignite and sustain volume discharge; generating atrain of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of the pulsed plasmathruster. The plasma thruster is used as a propulsion or steering deviceon satellites or spaceships in a low vacuum environment, such as space.

A method of magnetically enhanced chemical vapor deposition (CVD) plasmathruster includes providing a hollow cathode target assembly; forming agap between the hollow cathode target assembly and an anode; positioninga cathode magnet assembly, the cathode magnet assembly having aperpendicular field to the cathode target; closing the field with thecusp field through the gap; positioning a shield piece between the gapand the magnets forming the cusp field; connecting the shield piece to avoltage power supply or grounded; providing pulsed DC power to thecathode target to ignite and sustain volume discharge; generating atrain of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of the pulsed plasmathruster, an accelerating grid positioned parallel to the surface of thehollow cathode target, and a power supply connected to the acceleratinggrid providing voltage for ion acceleration.

A method of magnetically enhanced chemical vapor deposition (CVD) pulsedARC source includes providing a hollow cathode target assembly; forminga gap between the hollow cathode target assembly and an anode;positioning a cathode magnet assembly, the cathode magnet assemblyhaving a perpendicular field to the cathode target; closing the fieldwith the cusp field through the gap; positioning a shield piece betweenthe gap and the magnets forming the cusp field; connecting the shieldpiece to a voltage power supply or grounded; providing a DC power supplyto ignite and sustain and arc spot on the hollow cathode target andsuperimposing it with a pulsed DC power to the cathode target toincrease the pulsed current in the arc spot discharge; generating atrain of negative voltage pulses using the voltage power supply; andselecting a frequency, duration, and amplitude of the train of negativevoltage pulses to increase a degree of ionization of the evaporatedmaterial from the hollow cathode target. The arc source produces denseand smooth thin films on a substrate with tiny micro-particles and, insome cases, with no micro-particles.

The disclosed embodiments relate to a high energy density plasma (HEDP)magnetically enhanced sputtering source, apparatus, and method forsputtering hard coatings and dense, smooth, low-stress, thin films inthe presence of high-power pulse asymmetrical alternating current (AC)voltage waveforms. The high-power pulse asymmetric AC voltage waveformis generated by having a regulated voltage source with variable powerfeeding a regulated voltage to the high-power pulse direct current (DC)supply with a built-in first pulse forming network (PFN) withprogrammable pulse voltage duration and pulse voltage frequencyproducing at its output a train of regulated amplitude unipolar negativevoltage DC pulses with programmed pulse frequency and duration andsupplying these pulses to a second tunable pulse forming network (PFN)or pulse converting network (PCN) including a plurality of inductors andcapacitors for pulse applications connected in a specific format coupledto a magnetically enhanced sputtering source. By adjusting the pulsevoltage amplitude, duration, and frequency of the unipolar negativevoltage DC pulses and tuning the values of the inductors and capacitorsin the second PFN or PCN coupled to a magnetically enhanced sputteringsource, a resonance pulsed asymmetric AC discharge is achieved.

Another method to produce a resonance pulsed asymmetric AC discharge isto have fixed unipolar pulse power supply parameters (amplitude,frequency, and duration) feeding a second pulse forming network or pulseconverting network (PCN), in which the numerical values of the inductorsand capacitors, as well as the configuration, can be tuned to achievethe desired resonance values on the HEDP source to form a layer on thesubstrate. The tuning of the second PFN or PCN can be done manually withtest equipment, such as an oscilloscope, voltmeter and current meter orother analytical equipment; or electronically with a built-in softwarealgorithm, variable inductors, variable capacitors, and data acquisitioncircuitry. The negative voltage from the pulse asymmetric AC voltagewaveform generates high-density plasma from feed gas atoms and sputteredtarget material atoms between the cathode sputtering target and theanode of the magnetically enhanced sputtering source. The positivevoltage from the pulse asymmetrical AC voltage waveform attracts plasmaelectrons to the cathode sputtering area and generates positive plasmapotential. The positive plasma potential accelerates gas and sputteredtarget material ions from the cathode sputtering target area towards thesubstrate that improves deposition rate and increases ion bombardment onthe substrate. The reverse electron current during positive voltage canbe up to 50% from the discharge current during negative voltage.

In some embodiments, the magnetically enhanced sputtering source is ahollow cathode magnetron. The hollow cathode magnetron includes a hollowcathode sputtering target and a second tunable PFN or PCN, which has aplurality of capacitors and inductors. The resonance mode associatedwith the second tunable PFN or PCN is a function of the input unipolarvoltage pulse amplitude, duration, and frequency generated by thehigh-power pulse power supply, inductance, resistance and capacitance ofthe hollow cathode magnetron or any other magnetically enhanced device,the inductance, capacitance, and resistance of the cables between thesecond tunable PFN or PCN and hollow cathode magnetron, and a plasmaimpedance of the hollow cathode magnetron sputtering source itself aswell as the sputtered target material.

In some embodiments, rather than the hollow cathode magnetron, acylindrical magnetron is connected to an output of the tunable PFN orPCN. In some embodiments, rather than the hollow cathode magnetron, amagnetron with flat target is connected to the output of the secondtunable PFN or PCN. In the resonance mode, the output negative voltageamplitude of the high-power pulse voltage mode asymmetrical AC waveformon the magnetically enhanced device exceeds the negative voltageamplitude of the input unipolar voltage pulses into the second tunablePFN or PCN by 1.1-5 times. The unipolar negative high-power voltageoutput can be in the range of 400V-5000V. In the resonance mode, theabsolute value of the negative voltage amplitude of the asymmetrical ACwaveform can be in the range of 750-10000 V. In the resonance mode, theoutput positive voltage amplitude of the asymmetrical AC waveform can bein the range of 100-5000 V. In some cases, the resonance mode of thenegative voltage amplitude of the output AC voltage waveform can reach amaximum absolute value while holding all other component parameters(such as the pulse generator output, PFN or PCN values, cables and HEDPsource) constant, wherein a further increase of the input voltage to thesecond tunable PFN or PCN does not result in a voltage amplitudeincrease on the HEDP source, but rather an increase in the duration ofthe negative pulse in the asymmetric AC voltage waveform on the HEDPsource.

Sputtering processes are performed with a magnetically and electricallyenhanced HEDP plasma source positioned in a vacuum chamber. As mentionedabove, the plasma source can be any magnetically enhanced sputteringsource with a different shape of sputtering cathode target. Magneticenhancement can be performed with electromagnets, permanent magnets,stationary magnets, moveable magnets, and/or rotatable magnets. In thecase of a magnetron sputtering source, the magnetic field can bebalanced or unbalanced. A typical pulse power density of the HEDPsputtering process during a negative portion of the high voltage ACwaveform is in the range of 0.1-20 kW/cm². A typical pulse dischargecurrent density of the HEDP sputtering process during a negative portionof the high voltage AC waveform is in the range of 0.1-20 A/cm². In thecase of the hollow cathode magnetron sputtering source, the magneticfield lines form a magnetron configuration on a bottom surface of thehollow cathode target from the hollow cathode magnetron. Magnetic fieldlines are substantially parallel to the bottom surface of the hollowcathode target and partially terminate on the bottom surface and sidewalls of the hollow cathode target. The height of the side walls can bein the range of 5-100 mm. Due to the presence of side walls on thehollow cathode target, electron confinement is significantly improvedwhen compared with a flat target in accordance with the disclosedembodiments. In some embodiments, an additional magnet assembly ispositioned around the walls of the hollow cathode target. In someembodiments, there is a magnetic coupling between additional magnets anda magnetic field forms a magnetron configuration.

Since the high-power resonance asymmetric AC voltage waveform cangenerate HEDP plasma and, therefore, significant power on themagnetically enhanced sputtering source, the high-power resonanceasymmetric AC voltage waveform is pulsed in programmable bursts toprevent damage to the magnetically enhanced sputtering source fromexcess average power. The programmable duration of the high-powerresonance asymmetric AC voltage waveforms pulse bursts can be in therange of 0.1-100 ms. The frequency of the programmable high-powerresonance asymmetric AC voltage waveforms pulse bursts can be in therange of 1 Hz-10000 Hz. In some embodiments, the high-power resonanceasymmetric AC voltage waveform is continuous or has a 100% duty cycleassuming the HEDP plasma source can handle the average power. Thefrequency of the pulsed high-power resonance asymmetric AC voltagewaveform inside the programmable pulse bursts can be programmed in therange of 100 Hz-400 kHz with a single frequency or mixed frequency.

The magnetically enhanced HEDP sputtering source includes a magnetronwith a sputtering cathode target, an anode, a magnet assembly, aregulated voltage source connected to a high-power pulsed DC powersupply with a built in first pulse forming network to control voltagerise-time and or fall time of the unipolar negative pulse withprogrammable output pulse voltage amplitude, frequency, and duration.The pulsed power supply is connected to the input of the second tunablePFN or PCN, and the output of the second tunable PFN or PCN is connectedto the sputtering cathode target on the magnetically enhanced sputteringsource. The second tunable PFN or PCN, in resonance mode, generates thehigh-power resonance asymmetrical AC voltage waveforms and provides HEDPdischarge on the magnetically enhanced sputtering source.

The magnetically enhanced high-power pulse resonance asymmetric AC HEDPsputtering source may include a hollow cathode magnetron with a hollowcathode sputtering target, a second magnet assembly positioned aroundthe side walls of the hollow cathode target, an electrical switchpositioned between the second tunable PFN or PCN and hollow cathodemagnetron with a flat sputtering target rather than a hollow cathodeshape, and a magnetic array with permanent magnets, electromagnets, or acombination thereof.

The magnetically enhanced high-power pulse resonance asymmetric AC HEDPsputtering apparatus includes a magnetically enhanced HEDP sputteringsource, a vacuum chamber, a substrate holder, a substrate, a feed gasmass flow controller, and a vacuum pump.

The magnetically enhanced high-power pulse resonance asymmetric AC HEDPsputtering apparatus may include one or more electrically andmagnetically enhanced HEDP sputtering sources, substrate heater,controller, computer, high-density plasma radio frequency (RF) gasactivation source mounted remotely or as a ring source between the HEDPsource and the substrate or around the substrate, substrate bias powersupply, matching network, electrical switch positioned between thesecond tunable PFN or PCN and magnetically enhanced HEDP sputteringsource, and a plurality of electrical switches connected with aplurality of magnetically enhanced high-power pulse resonance asymmetricAC HEDP sputtering sources and output of the second tunable PFN or PCN.

A method of providing high-power pulse resonance asymmetric AC HEDP filmsputtering includes positioning a magnetically enhanced sputteringsource inside a vacuum chamber, connecting the cathode target to theoutput of the second tunable PFN or PCN that, in resonance mode,generating the high-power asymmetrical AC waveform, positioning asubstrate on a substrate holder, providing feed gas, programing voltagepulses frequency and duration, adjusting pulse voltage amplitude of theprogrammed voltage pulses with fixed frequency and duration feeding thesecond tunable PFN or PCN, generating the output high voltageasymmetrical AC waveform with a negative voltage amplitude that exceedsthe negative voltage amplitude of the negative unipolar voltage pulsesin the resonance mode, thereby resulting in a high-power pulse resonanceasymmetric AC HEDP discharge.

The method of magnetically enhanced high-power pulse resonanceasymmetric AC HEDP film sputtering may include positioning an electricalswitch between the hollow cathode magnetron and the second tunable PFNor PCN that, in resonance mode, generates the high voltage asymmetricalAC waveform, applying heat to the substrate or cooling down thesubstrate, applying direct current (DC) or radio frequency (RF)continuously and/or using a pulse bias voltage to the substrate holderto generate a substrate bias, connecting the second tunable PFN or PCNthat, in resonance mode, generates the high voltage asymmetrical ACwaveform simultaneously to the plurality of hollow cathode magnetrons ormagnetrons with flat targets, and igniting and sustaining simultaneouslyHEDP in the plurality of the hollow cathode magnetron.

The disclosed embodiments include a method of sputtering a layer on asubstrate using a high-power pulse resonance asymmetric AC HEDPmagnetron. The method includes configuring an anode and a cathode targetmagnet assembly to be positioned in a vacuum chamber with a sputteringcathode target and the substrate, applying high-power negative unipolarvoltage pulses with regulated amplitude and programmable duration andfrequency to a second tunable PFN or PCN, wherein the second tunable PFNor PCN includes a plurality of inductors and capacitors, and adjustingan amplitude associated with the unipolar voltage pulses with programmedduration and frequency to cause a resonance mode associated with thesecond tunable pulse forming network to produce an output high-powerpulse resonance asymmetric AC on the HEDP sputtering source. The outputhigh-power pulse resonance asymmetric AC voltage waveform from thesecond tunable PFN or PCN is operatively coupled to the HEDP sputteringcathode target, and the output high-power pulse resonance asymmetric ACvoltage waveform includes a negative voltage exceeding or equal to theamplitude of the input unipolar voltage pulses coming to the secondtunable PFN or PCN during the resonance mode and sputtering discharge ofthe HEDP magnetron. In some cases, with all conditions fixed, anyfurther increase of the amplitude of the unipolar voltage pulses causesonly an increase in the duration of the maximum value of the negativevoltage amplitude of the output high-power asymmetric AC voltagewaveform in response to the pulse forming network being in the resonancemode, thereby causing the HEDP magnetron sputtering discharge to formthe layer on the substrate.

The disclosed embodiments further include an apparatus that sputters alayer on a substrate using a high-power pulse resonance asymmetric ACHEDP magnetron. The apparatus includes an anode, cathode target magnetassembly, regulated high voltage source with variable power, high-powerpulse power supply with programmable voltage pulse duration andfrequency power supply, and a second tunable PFN or PCN. The anode andcathode target magnet assembly are configured to be positioned in avacuum chamber with a sputtering cathode target and the substrate. Thehigh-power pulse power supply with a built-in first PFN generatesprogrammable unipolar negative voltage DC pulses with defined amplitude,frequency, and duration. The second tunable PFN or PCN includes aplurality of inductors and capacitors, and the amplitude of the voltagepulses are adjusted to be in the resonance mode associated with thesecond tunable PFN or PCN and magnetically enhanced sputtering sourcefor specific programmed pulse parameters, such as amplitude, frequencyand duration of the unipolar voltage pulses. The output of the secondtunable PFN or PCN is operatively coupled to the sputtering cathodetarget, and the output of the second tunable PFN or PCN in the resonancemode generates a high-power resonance asymmetric AC voltage waveformthat includes a negative voltage exceeding the amplitude of the input tosecond tunable PFN or PCN unipolar voltage pulses. An AC voltagewaveform sustains plasma and forms high-power pulse resonance asymmetricAC HEDP magnetron sputtering discharge, thereby causing the HEDPmagnetron sputtering discharge to form the layer of the sputtered targetmaterial on the substrate.

The disclosed embodiments also include a computer-readable mediumstoring instructions that, when executed by a processing device, performa method of sputtering a layer on a substrate using a high energydensity plasma (HEDP) magnetron, wherein the operations includeconfiguring an anode and a cathode target magnet assembly to bepositioned in a vacuum chamber with a sputtering cathode target and thesubstrate, applying regulated amplitude unipolar voltage pulses withprogrammed frequency and duration to the second tunable PFN or PCN,wherein the pulse forming network includes a plurality of inductors andcapacitors, and adjusting a pulse voltage for programmed voltage pulsesfrequency and duration to cause a resonance mode associated with thesecond tunable PFN or PCN. The output asymmetric AC voltage waveform isoperatively coupled to the sputtering cathode target, and the outputasymmetric AC voltage waveform includes a negative voltage exceeding theamplitude of the regulated unipolar voltage pulses amplitude withprogrammed frequency and duration during sputtering discharge of theHEDP magnetron. A further increase in the amplitude of the regulatedunipolar voltage pulses with programmed frequency and duration causes aconstant amplitude of the negative voltage of the output AC waveform inresponse to the pulse forming network being in the resonance mode,thereby causing the HEDP magnetron sputtering discharge to form thelayer on the substrate.

Other embodiments will become apparent from the following detaileddescription considered in conjunction with the accompanying drawings. Itis to be understood, however, that the drawings are designed as anillustration only and not as a definition of the limits of any of theembodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

The following drawings are provided by way of example only and withoutlimitation, wherein like reference numerals (when used) indicatecorresponding elements throughout the several views, and wherein:

FIG. 1 (a) shows an illustrative view of a train of output negativeunipolar voltage pulses with amplitude V1 and frequency f1 from ahigh-power pulse supply with programmable pulse voltage duration andpulse voltage frequency;

FIG. 1 (b) shows an illustrative view of an output resonanceasymmetrical AC voltage waveform with a duration of negative voltage τ1from a second tunable pulse forming network (PFN) or pulse convertingnetwork (PCN);

FIG. 1 (c) shows an illustrative view of a train of output negativeunipolar voltage pulses with amplitude V2 and frequency f1 from ahigh-power pulse supply with programmable pulse voltage duration andpulse voltage frequency;

FIG. 1 (d) shows an illustrative view of the output resonanceasymmetrical AC voltage waveform with a duration of negative voltage τ2from the second tunable PFN or PCN;

FIG. 1 (e) shows an illustrative view of the output resonanceasymmetrical AC voltage waveform with three oscillations from the secondtunable PFN or PCN;

FIG. 1 (f) shows an illustrative view of the output resonanceasymmetrical AC current waveform with three oscillations from the secondtunable PFN or PCN;

FIG. 1 (g) shows an illustrative cross-sectional view of components andmagnetic field lines of a magnetically enhanced HEDP sputtering sourcewith a stationary cathode target magnetic array;

FIG. 1 (h) shows an illustrative cross-sectional view of a hollowcathode target;

FIG. 2 (a) shows an illustrative circuit diagram of the high-power pulsesupply connect to a second PFN or PCN to form a resonance AC powersupply connected to an HEDP source;

FIG. 2 (b) shows an illustrative view of a train of unipolar voltagepulses with frequency f1 and amplitude V1 applied to the second tunablePFN or PCN, and an output voltage waveform from the second tunable PFNor PCN in-non-resonance mode in the second tunable PFN or PCN;

FIG. 2 (c) shows an illustrative view of a train of unipolar voltagepulses with frequency f2 and amplitude V2 applied to the second tunablePFN or PCN, and an output voltage waveform from the second tunable PFNor PCN in a partial pulsed DC modulated non-resonance mode;

FIG. 2 (d) shows an illustrative view of a train of unipolar voltagepulses with frequency f3 and amplitude V4 applied to the second tunablePFN or PCN, and an output resonance asymmetrical AC voltage waveformfrom the second tunable PFN or PCN in the resonance mode.

FIG. 2 (e) shows an illustrative circuit diagram of the second tunablePFN or PCN when the plurality of inductors and capacitors are connectedin series;

FIG. 2 (f) shows an illustrative circuit diagram of the second tunablePFN or PCN when inductors and capacitors are connected in parallel;

FIG. 3 (a) shows an illustrative view of a train of input unipolarnegative voltage pulses with two different voltage amplitudes applied tothe second tunable PFN or PCN.

FIG. 3 (b) shows an illustrative view of output resonance asymmetricalAC voltage waveform pulses with two different voltage amplitudesgenerated at resonance conditions in the second tunable PFN or PCN;

FIG. 4(a) shows an illustrative circuit diagram of the second tunablePFN or PCN and a plurality of electrical switches;

FIG. 4 (b) shows a train of resonance asymmetrical AC waveforms appliedto different magnetically enhanced sputtering sources;

FIG. 5 (a) shows an illustrative view of the magnetically enhanced HEDPsputtering apparatus;

FIG. 5 (b) shows different voltage pulse shapes that can be generated bya substrate bias power supply;

FIG. 5 (c) shows an illustrative view of a via in the semiconductorwafer;

FIG. 6 (a) shows a train of resonance asymmetrical AC voltage waveforms;

FIG. 6 (b) shows a plurality of unipolar voltage pulses generated by apulse DC power supply;

FIG. 6 (c) shows a plurality of unipolar RF voltage pulses generated bya pulse RF power supply;

FIG. 7 shows a block diagram of at least a portion of an exemplarymachine in the form of a computing system that performs methodsaccording to one or more embodiments disclosed herein;

FIG. 8 (a) shows an illustrative circuit diagram of a high-powerresonance pulse forming network (PFN) or pulse converting network (PCN)coupled to a high-frequency unipolar pulse generator;

FIG. 8 (b) shows illustrative views of trains of oscillatory unipolarvoltage pulses applied to the second tunable PFN or PCN, and an outputvoltage waveform from the second tunable PFN or PCN without a resonancemode in the second tunable PFN or PCN;

FIGS. 8 (c, d) show illustrative views of trains of oscillatory unipolarvoltage pulses applied to the second tunable PFN or PCN, and an outputvoltage waveform from the second tunable PFN or PCN with a resonancemode in the second tunable PFN or PCN;

FIGS. 9 (a, b) show a hollow cathode target combined from two pieces;

FIG. 10 (a) shows a hollow cathode target combined from two pieces andconnected to two different power supplies;

FIG. 10 (b) shows the voltage output from two high-power pulse resonanceAC power supplies;

FIG. 11 shows an illustrative circuit diagram of the high-powerresonance pulse forming network (PFN) or PCN including a transformer anddiodes;

FIGS. 12 (a)-(g) show different AC voltage waveforms;

FIG. 13 shows arc resonance AC discharge current and arc resonance ACdischarge voltage waveforms;

FIGS. 14 (a, b) show output voltage waveforms from the high-powerresonance pulse forming network (PFN) when connected to the HEDPmagnetron and generating HEDP discharge;

FIG. 15 (a) shows an illustrative circuit diagram of the high-powerpulse generator with built-in PFN connected to a second tunable PFN orpulse converter network (PCN), which is connected to an HEDP magnetronsource producing a pulsed resonance AC discharge to form a thin filmlayer on a substrate;

FIG. 15 (b) shows an illustrative view of a train of input unipolarnegative voltage pulses with two different voltage amplitudes applied tothe tunable PCN;

FIG. 15 (c) shows an illustrative view of output resonance asymmetricalAC voltage waveform pulses with two different voltage amplitudesgenerated at resonance conditions in the tunable PCN;

FIG. 15 (d) shows an illustrative view of a train of input oscillatoryunipolar negative voltage pulses with two different voltage amplitudesand controlled voltage rise-time and fall-time applied to the tunablePCN;

FIG. 15 (e) shows an illustrative view of output resonance asymmetricalAC voltage waveform pulses with two different voltage amplitudesgenerated at resonance conditions in the tunable PCN;

FIG. 15 (f) shows an illustrative view of a train of unipolar voltagepulses with frequency B5 and amplitude V1 applied to the tunable PCN,and an output voltage waveform from the tunable PCN in non-resonancemode in the tunable PCN;

FIG. 15 (g) shows an illustrative view of a train of unipolar voltagepulses with frequency B6 and amplitude V2 applied to the tunable PCN,and an output voltage waveform from the tunable PCN in a modulatednon-resonance mode;

FIG. 15 (h) shows an illustrative view of a train of unipolar voltagepulses with frequency B7 and amplitude V4 applied to the tunable PCN,and an output resonance asymmetrical AC voltage waveform from thetunable PCN in the resonance mode;

FIG. 15 (i) shows an illustrative view of a train of oscillatoryunipolar voltage pulses with frequency B8 and amplitude V1 andcontrolled voltage rise-time and fall-time applied to the tunable PCN,and an output voltage waveform from the tunable PCN in non-resonancemode in the tunable PCN;

FIG. 15 (j) shows an illustrative view of a train of oscillatoryunipolar voltage pulses with frequency B9 and amplitude V2 andcontrolled voltage rise-time and fall-time applied to the tunable PCN,and an output voltage waveform from the tunable PCN in a modulatednon-resonance mode;

FIG. 15 (k) shows an illustrative view of a train of an oscillatoryunipolar voltage pulses with frequency B10 and amplitude V4 andcontrolled voltage rise-time and fall-time applied to the tunable PCN,and an output resonance asymmetrical AC voltage waveform from thetunable PCN in the resonance mode;

FIG. 15 (l) shows an illustrative view of a train of input unipolarnegative voltage pulses with two different voltage amplitudes applied tothe tunable PCN with burst time of B11 and two different frequencies B12and B13;

FIG. 15 (m) shows an illustrative view of mixed output unipolar voltagepulses and resonance asymmetrical AC voltage waveform pulses with twodifferent voltage amplitudes generated in the tunable PCN;

FIG. 16 (a) shows an illustrative cross-sectional view of components andmagnetic field lines of a magnetically enhanced HEDP sputtering sourcewith a stationary cathode target magnetic array connected to the tunablePCN and high pulse power generator with built-in PFN;

FIG. 16 (b) shows an illustrative cross-sectional view of a hollowcathode target;

FIG. 17 (a) shows an illustrative cross-sectional view of components andmagnetic field lines of a magnetically enhanced HEDP sputtering sourcewith a stationary cathode target magnetic array connected to the tunablePCN and high pulse power generator with built-in PFN;

FIG. 17 (b) shows an illustrative cross-sectional view of a shapedgeometry hollow cathode target that enhances the ionization process;

FIG. 18 (a) shows an illustrative cross-sectional view of components andmagnetic field lines of a magnetically enhanced HEDP sputtering sourcewith a stationary cathode target magnetic array connected to a highfrequency generator, the tunable PCN, and high pulse power generatorwith built-in PFN;

FIG. 18 (b) shows an illustrative cross-sectional view of a hollowcathode target;

FIG. 19 (a) shows an illustrative view of the magnetically enhanced HEDPsputtering apparatus with a ring HDP radio frequency (RF) gas sourcepositioned between the HEDP source and the substrate;

FIG. 19 (b) shows different voltage pulse shapes that can be generatedby a substrate bias power supply;

FIG. 20 (a) shows an illustrative view of sputtering apparatus equippedwith multiple magnetically enhanced HEDP sources;

FIG. 20 (b) shows different voltage pulse shapes that can be generatedby a substrate bias power supply;

FIG. 20 (c) shows different voltage pulse shapes that can be generatedby a substrate bias power supply;

FIG. 21 (a) shows an illustrative view of the magnetically enhanced HEDPsputtering apparatus with a remote HDP RF gas source positioned on aside of a chamber; and

FIG. 21 (b) shows different voltage pulse shapes that can be generatedby a substrate bias power supply.

FIG. 22 (a) shows an illustrative cross-sectional view of an embodimentof a magnetically enhanced chemical vapor deposition (CVD) source;

FIG. 22 (b) shows an illustrative cross-sectional view of an embodimentof the magnetic field lines for the magnetically enhanced CVD source;

FIG. 22 (c) shows a timing diagram of negative voltage pulses that canbe generated by a pulsed power supply and applied to the pole piece fromthe magnetically enhanced CVD source;

FIG. 22 (d) shows a timing diagram of negative RF voltage applied to thecathode target when negative pulses are applied to the pole piece fromthe magnetically enhanced CVD source;

FIG. 22 (e) shows a timing diagram of negative voltage pulses withdifferent amplitudes that can be generated by a pulsed power supply andapplied to the pole piece from the magnetically enhanced CVD source;

FIG. 22 (f) shows a timing diagram of negative RF voltage applied to thecathode target when negative voltage pulses with different amplitudesare applied to the pole piece from the magnetically enhanced CVD source;

FIG. 22 (g) shows a timing diagram of negative voltage pulses withdifferent frequencies that can be generated by a pulsed power supply andapplied to the pole piece from the magnetically enhanced CVD source;

FIG. 22 (h) shows a timing diagram of negative RF voltage applied to thecathode target when negative voltage pulses with different frequenciesare applied to the pole piece from the magnetically enhanced CVD source;

FIG. 22 (i) shows a timing diagram of negative voltage pulses that canbe generated by a pulsed power supply and applied to the pole piece fromthe magnetically enhanced CVD source;

FIG. 22 (j) shows a timing diagram of negative RF voltage applied to aninductively grounded cathode target when negative voltage pulses withdifferent frequencies are applied to the pole piece from themagnetically enhanced CVD source;

FIG. 23 (a) shows an illustrative cross-sectional view of an embodimentof the magnetically enhanced CVD source.

FIG. 23 (b) shows an illustrative cross-sectional view of a gap betweenthe cathode and the anode of the magnetically enhanced CVD source with apole piece made from non-magnetic material;

FIG. 23 (c) shows an illustrative cross-sectional view of a gap betweenthe cathode and the anode of the magnetically enhanced CVD source whenmagnets that form cusp magnetic field are electromagnets;

FIG. 24 shows a timing diagram of negative voltage pulses that can begenerated by a pulsed power supply and applied to the pole piece;

FIG. 25 (a, b, c, d) show timing diagrams of the negative voltage pulsesthat can be generated by a pulsed power supply and applied to thecathode assembly;

FIG. 26 (a, b, c, d) show timing diagrams of RF voltages that can beapplied to the cathode assembly;

FIG. 27 (a, b, c, d, e) show timing diagrams of different shapes ofvoltage pulses that can be applied to the cathode assembly;

FIG. 28 shows an illustrative cross-sectional view of an embodiment ofthe magnetically enhanced CVD apparatus for thin film deposition on around substrate, such as a Si substrate;

FIG. 29 shows an illustrative cross-sectional view of an embodiment ofthe magnetically enhanced CVD system including two rectangular CVDsources;

FIG. 30 shows an illustrative cross-sectional view of an embodiment ofthe magnetically enhanced CVD source and processes for applying acoating on a razor blade tip;

FIG. 31 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, a hollow cathode magnet assembly with a field perpendicular to thehollow cathode target and coupling with the cusp field, multiple RFpower supplies, and a high-power pulsed power supply connected to thehollow cathode target, and inductor connected to a switch;

FIG. 32 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, multiple RF power supplies connected to the hollow cathode target,and an inductor connected to the switch;

FIG. 33 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, multiple RF power supplies connected to the hollow cathode target,an inductor connected to a switch, a hollow cathode with a specificmagnet assembly forming an outer ring coupling to the cusp field throughthe gap and an inner magnet assembly forming a magnetron configurationon the hollow cathode target;

FIG. 34 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, multiple RF power supplies and a high power pulsed power supplyconnected to a hollow cathode target, an inductor connected to a switch,the hollow cathode including a specific magnet assembly forming an outerring coupling to the cusp field through the gap and an inner magnetassembly forming a magnetron configuration on the hollow cathode target;

FIG. 35 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, a high power pulsed power supply connected to the hollow cathodetarget, an inductor connected to a switch, the hollow cathode includinga specific magnet assembly forming an outer ring coupling to the cuspfield through the gap and an inner magnet assembly forming a magnetronconfiguration on the hollow cathode target;

FIG. 36 shows an illustrative cross-sectional view of an embodiment of amagnetically enhanced chemical vapor deposition (CVD) source with ashield separating the gap from the magnetic pole pieces, an acceleratinggrid, a hollow cathode magnet assembly with a field perpendicular to thehollow cathode target and coupling with the cusp field, a high powerpulsed power supply connected to the hollow cathode target, and aninductor connected to a switch;

FIG. 37 shows timing diagrams of two RF voltages running in twodifferent modes, one being continuous, and the second RF voltage beingpulsed with varying pulsed power that can be applied to the magneticallyenhanced chemical vapor deposition (CVD) cathode assembly;

FIG. 38 shows timing diagrams of two RF voltages running in twodifferent modes, one being continuous, and the second RF voltages beingpulsed with the same pulsed power that can be applied to themagnetically enhanced chemical vapor deposition (CVD) cathode assembly;

FIG. 39 show timing diagrams of two RF voltages running in pulsed modewith two different voltage levels superimposed with a varying high-powerasymmetric AC pulse that can be applied to the magnetically enhancedchemical vapor deposition (CVD) cathode assembly;

FIG. 40 shows a timing diagram of pulsed RF voltages that can be appliedto the magnetically enhanced chemical vapor deposition (CVD) cathodeassembly;

FIG. 41 shows a timing diagram of two synchronized pulsed RF voltages intwo different power settings that can be applied to the magneticallyenhanced chemical vapor deposition (CVD) cathode assembly;

FIG. 42 shows a timing diagram of two RF voltages running in pulsed modewith two different voltage levels, super-imposed with a high powerasymmetric AC pulse that can be applied to the magnetically enhancedchemical vapor deposition (CVD) cathode assembly.

FIG. 43 shows timing diagrams of two RF phase locked voltages having thesame frequency in continuous mode with two different power levels thatcan be applied to the magnetically enhanced chemical vapor deposition(CVD) cathode assembly;

FIG. 44 shows a timing diagram of a high power asymmetric AC pulse thatcan be applied to the magnetically enhanced chemical vapor deposition(CVD) cathode assembly;

FIG. 45 shows a timing diagram of a high power asymmetric AC pulse withvoltage peaks that can be applied to the magnetically enhanced chemicalvapor deposition (CVD) cathode assembly;

FIG. 46 shows timing diagrams of two RF voltages in pulsed mode with twodifferent voltage levels superimposed with a varying high powerasymmetric AC pulse single voltage peak and double peak that can beapplied to the magnetically enhanced chemical vapor deposition (CVD)cathode assembly;

FIG. 47 (a) shows timing diagrams of unipolar voltage pulses provided toa tunable PCN connected to the magnetically enhanced chemical vapordeposition (CVD) cathode assembly producing a high-power DC pulse thatcan be applied to the magnetically enhanced chemical vapor deposition(CVD) cathode assembly;

FIG. 47 (b) shows timing diagrams of unipolar voltage pulses provided toa tunable PCN connected to the magnetically enhanced chemical vapordeposition (CVD) cathode assembly producing a high-power DC pulse withoscillations that can be applied to the magnetically enhanced chemicalvapor deposition (CVD) cathode assembly;

FIG. 47 (c) shows timing diagrams of unipolar voltage pulses provided toa tunable PCN connected to the magnetically enhanced chemical vapordeposition (CVD) cathode assembly producing a high-power resonanceasymmetric or symmetric AC pulse that can be applied to the magneticallyenhanced chemical vapor deposition (CVD) cathode assembly;

FIG. 48(a) shows an illustrative diagram of a high-power pulsed voltagepower supply connected to the tunable PCN converting the unipolar pulsedDC pulses to a resonance asymmetric pulsed AC discharge when connectedto a magnetically enhanced chemical vapor deposition (CVD) source;

FIG. 48 (b) show a timing diagram of a two-voltage level high powerunipolar pulsed DC pulses powering the tunable PCN; and

FIG. 48 (c) shows a timing diagram at the output of the tunable PCN withtwo voltage levels and high-power resonance asymmetric AC pulsesprovided to a magnetically enhanced chemical vapor deposition (CVD)source.

It is to be appreciated that elements in the figures are illustrated forsimplicity and clarity. Common but well-understood elements that areuseful or necessary in a commercially feasible embodiment are not shownin order to facilitate a less hindered view of the illustratedembodiments.

DETAILED DESCRIPTION

A high energy density plasma (HEDP) magnetically enhanced sputteringsource includes a hollow cathode magnetron, pulse power supply, andsecond tunable pulse forming network (PFN) or pulse converting network(PCN). The second tunable PFN or PCN, in resonance mode, generates ahigh voltage asymmetrical alternating current (AC) waveform with afrequency in the range of 400 Hz to 400 kHz. The resonance mode of thesecond tunable PFN or PCN, as used herein, is a mode in which inputnegative unipolar voltage pulses with adjusted amplitude, and programmedduration, and frequency generate an output high-power resonance pulseasymmetric AC voltage waveform with a negative amplitude that exceeds oris equal to the negative amplitude of the input negative unipolarvoltage pulses. In some cases, further increase of the amplitude of theinput negative unipolar voltage pulses from the high-power pulse powersupply does not increases the negative amplitude of the output highresonance asymmetric AC voltage waveform, but increases the duration ofthe maximum value of the negative resonance AC voltage waveform as shownin FIGS. 1 (a, b, c, d). In some, a further increase of the amplitude ofthe input negative unipolar voltage pulses from the high-power pulsepower supply increases the negative amplitude of the output highresonance asymmetric AC voltage waveform. When the amplitude of theinput unipolar negative DC voltage pulses equals V1 as shown in FIG. 1(a) at the output of the second tunable PFN or PCN during the HEDPdischarge, there is an asymmetrical resonance AC voltage waveform asshown in FIG. 1 (b). The resonance asymmetrical AC voltage waveform hasa negative portion V⁻ with a duration τ1, and positive portions V₁ ⁺ andV₂ ⁺. When the amplitude voltage becomes V2 and V2>V1, the amplitude ofthe resonance negative AC voltage waveform is the same as V3, but theduration is τ2 and τ2>τ1. A negative portion of the resonanceasymmetrical AC voltage waveform generates AC discharge current I₁, andpositive voltage generates a discharge current I₂ as shown in FIGS. 1(e, f). A negative portion of the high-power asymmetrical resonance ACvoltage waveform generates HEDP magnetron discharge from feed gas andsputtering target material atoms inside a hollow cathode target due tohigh discharge voltage and improved electron confinement. During thesputtering process, the hollow cathode target power density is in therange of 0.1 to 20 kW/cm². A positive portion of the high voltageasymmetrical AC voltage waveform provides absorption of electrons fromthe HEDP by the hollow cathode magnetron surface and, therefore,generates a positive plasma potential that causes ions to acceleratetowards the hollow cathode target walls and a substrate. The ion energyis a function of the amplitude and duration of the positive voltage. Theduration of the maximum absolute value of the negative voltage from thehigh voltage asymmetrical AC voltage waveform is in the range of0.001-to 100 ms. The discharge current during the positive voltage ofthe asymmetrical resonance AC voltage waveform can be in the range of5-50% of the discharge current during the negative voltage from the ACvoltage waveform.

The high-power pulse resonance asymmetric AC HEDP magnetron sputteringprocess is substantially different from high-power impulse magnetronsputtering (HIPIMIS) due to the resonance AC nature of the dischargegenerated by the second tunable PFN or PCN and HEDP magnetron discharge.The high-power impulse magnetron power supply (HIPMIS, HPPMS, or MPP)generates a unipolar negative pulsed voltage DC output on the magnetronwith defined pulse parameters, such as amplitude, width, and frequencyto form a layer on a substrate. Adding a second pulse forming orconverting network in between the high-power pulse generator and themagnetron converts the unipolar negative pulsed DC to a high-powerpulsed resonance asymmetric AC discharge to form a layer on a substrate.The resonance asymmetrical high-power AC discharge is substantially morestable when compared with HIPIMS discharge. In the resonance mode, thehigh-power AC voltage waveform can be symmetrical or asymmetrical. Forexample, for a carbon hollow cathode magnetron, a sputtering processwith a stable, high-power asymmetric AC discharge current density ofabout 6 A/cm² is obtained, thereby forming a dense, smooth, and hard,low-stress diamond-like carbon (DLC) layer on the substrate at lowtemperature. The disclosed embodiments relate to ionized physical vapordeposition (I-PVD) with an HEDP sputtering apparatus and method.

A sputtering process can be performed with a hollow cathode magnetronsputtering source and direct current (DC) power supply. An example ofsuch an apparatus and sputtering process is described in Zhehui Wang andSamuel A. Cohen, Hollow cathode magnetron, J. Vac. Sci. Technol., Vol.17, January/February 1999, which is incorporated herein by reference inits entirety. However, these techniques do not address the operation ofa hollow cathode magnetron sputtering source with a high voltageresonance asymmetrical AC voltage waveform, a method of acceleratingions from the feed gas and sputtering target material atoms bycontrolling a positive voltage portion of a high-power asymmetricalresonance AC voltage waveform applied to an entirely hollow cathodemagnetron, or operation of a pulse power supply and second tunable PFNor PCN when the second tunable PFN or PCN is in a resonant mode andgenerating a high-power resonance asymmetrical AC voltage waveform on ahollow cathode magnetron sputtering source with power pulse densities ofabout 1-20 kW/cm2.

A magnetically and electrically enhanced HEDP sputtering source 100shown in FIG. 1(g) includes a hollow cathode magnetron 101 and ahigh-power pulse resonance AC power supply 102, which includes ahigh-power voltage source 119, a high-power pulsed power supply withprogrammable voltage pulse frequency and amplitude 120, and secondtunable PFN or PCN 124. This second tunable PFN or PCN, in resonancemode, generates a high-power resonance asymmetrical AC waveform. Thehollow cathode magnetron 101 includes a hollow cathode target 103. Thehollow cathode target 103 has side walls 104 and a bottom part 105 asshown in FIGS. 1 (g), (h). An anode 106 is positioned around the sidewalls 104. Magnets 107, 108, and magnetic pole piece 109 are positionedinside a water jacket 110. The water jacket 110 is positioned inside ahousing 111. The hollow cathode target 103 is bonded to a copper backingplate 112. Magnets 107, 108 and magnetic pole piece 109 generatemagnetic field lines 113, 114 that terminate on the bottom part 105 andform a magnetron configuration. Magnetic pole piece 109 is positioned ona supporter 190. Magnetic field lines 115, 116 terminate on the sidewalls 104. Water jacket 110 has a water inlet 117 and a water outlet118. The water inlet 117 and water outlet 118 are isolated from housing111 by isolators 121. Water jacket 110 and, therefore, hollow cathodetarget 101 are connected to a high-power pulse resonance AC power supply102. The following chemical elements, or a combination of any two ormore of these elements, can be used as a cathode material: B, C, Al, Si,P, S, Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe,Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W,Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm,Yb, Be, Mg, Ca, Sr, and/or Ba. A combination of these chemical elementswith the gases O₂, N₂, F, Cl, and/or H₂ can also be used as the cathodematerial.

The hollow cathode target magnetic array may have electromagnets ratherthan permanent magnets. In some embodiments, the electromagnets arepositioned around the side walls 104 of the hollow cathode target. Theseside electromagnets can balance and unbalance the hollow cathode targetmagnetic array.

In some embodiments, the hollow cathode target, during the sputteringprocess, has a temperature between 20 C and 1000 C. A high targettemperature in the range of 0.5-0.7 of the melting target temperatureincreases the deposition rate since the sputtering yield is a functionof the temperature in this temperature range. In some embodiments, aportion of the target material atoms arriving on the substrate isevaporated from the target surface. In some embodiments, the sputteringyield is increased due to high target temperature during the pulsedpower.

The high-power pulse resonance AC power supply 102 includes a regulatedvoltage source with variable power feeding 119, a high-power pulsedpower supply with programmable voltage pulse frequency and amplitude 120and a second tunable PFN or PCN 124 as shown in FIG. 2 (a). A high-powerpulsed power supply with programmable voltage pulse frequency andamplitude 120 has a computer 123 and controller 122. A regulated voltagesource with variable power feeding 119 supplies voltage in the range of400-5000 V to the high-power pulsed power supply with programmablevoltage pulse frequency and amplitude 120. The high-power pulsed powersupply with programmable voltage pulse frequency and amplitude 120generates a train of unipolar negative voltage DC pulses to the secondtunable PFN or PCN 124. The amplitude of the unipolar negative voltagepulses is in the range of 400 to 5000 V, the duration of each of thevoltage pulses is in the range of 1 to 100 μs. The distance betweenvoltages pulses can be in the range of 0.4 to 1000 μs, thus controllingthe frequency to be between 0.1 to 400 kHz. In some embodiments, thereis a step-up transformer between the high-power pulsed power supply withprogrammable voltage pulse frequency and amplitude 120 and the secondtunable PFN or PCN 124. In this case, the high-power pulsed power supplywith programmable voltage pulse frequency and amplitude 120 generates atrain of AC voltage waveforms coming to the step-up transformer. In someembodiments, there is a diode bridge between the step-up transformer andsecond tunable PFN or PCN. The second tunable PFN or PCN includes aplurality of specialized variable inductors L1-L4 and a plurality ofspecialized variable capacitors C1-C2 for high-power pulse applications.The value of the inductors and capacitors can be controlled by computer123 and/or controller 122. In some embodiments, at least one inductorand/or one capacitor are variable and their values can be computercontrolled. The inductors L1, L2, L3, L4 values can be in the range of 0to 1000 μH each. Capacitors C1, C2, C3, and C4 have values in the rangeof 0 to 1000 μF each. The high-power pulse programmable power supply 120is connected to controller 122 and/or computer 123. Controller 122and/or computer 123 control output values and timing of the power supply102. Power supply 102 can operate as a standalone unit withoutconnection to the controller 122 and/or computer 123.

A high-power pulse resonance AC power supply 102 shown in FIG. 2(a)includes output current and voltage monitors 125, 126, respectively. Thecurrent and voltage monitors 125, 126 are connected to an arcsuppression circuit 127. If the current monitor 125 detects a highcurrent and the voltage monitor 126 detects a low voltage, the arcsuppression circuit 127 is activated. It is to be noted that the voltagemonitor 126 is connected to an output of the second tunable PFN or PCN.The arc suppression circuit sends a signal to stop generating incomingvoltage pulses to the second tunable PFN or PCN 124 and connects theoutput of the second tunable PFN or PCN through switch 131 to thepositive electrical potential generated by power supply 130 in order toeliminate arcing as shown in FIG. 2 (a). The hollow cathode is shown asa C-shaped structure coupled to the output of the second tunable PFN orPCN 124.

The train of unipolar negative voltage DC pulses from the high-powerpulse programmable power supply 120 is provided to the second tunablePFN or PCN 124. Depending on the amplitude, duration, and frequency ofthe input unipolar negative voltage DC pulses in the train, the outputtrain from the second tunable PFN or PCN 124 of the unipolar negativevoltage DC pulses can have a different shape and amplitude when comparedwith input unipolar negative voltage DC pulses. In non-resonant mode, inthe second tunable PFN or PCN 124, the input train of unipolar negativevoltage DC pulses forms one negative voltage pulse with an amplitudeequivalent to the amplitude of the negative unipolar voltage DC pulsesand a duration equivalent to the duration of the input train of unipolarnegative voltage DC pulses. When connected with the magneticallyenhanced sputtering source, this voltage pulse can generate aquasi-static pulse DC discharge as shown in FIG. 2 (b). In partialresonance mode as shown in FIG. 2 (c), in the second tunable PFN or PCN124, the input train of negative unipolar DC pulses forms one negativepulse with an amplitude and duration, but with voltage oscillations. Theamplitude of these oscillations can be 30-80% of the total voltageamplitude. The frequency of the voltage oscillations or modulations issubstantially equivalent to the frequency of the input unipolar negativevoltage DC pulses. This mode of operation is beneficial to maintaining ahigh deposition rate, which is greater than that obtained in fullresonance mode, and a high ionization of sputtered target materialatoms. In resonance mode as shown in FIG. 2 (d), the input train ofunipolar negative voltage DC pulses forms asymmetrical AC voltagewaveforms with a maximum negative voltage amplitude that cansignificantly exceed the voltage amplitude of the input unipolarnegative voltage DC pulses. In some embodiments, in non-optimizedresonance mode, the input train of unipolar negative voltage DC pulsesforms an asymmetrical AC voltage waveform with a maximum negativevoltage amplitude that does not exceed negative voltage DC pulses. Thepositive amplitude of the AC voltage waveform can reach the absolutevalue of the negative amplitude and form a symmetrical AC voltagewaveform. In FIG. 2 (b), the pulsing unit generates, during time t1, atrain of unipolar negative voltage DC pulses with a frequency f1 andamplitude V1.

In FIG. 2 (c), the high-power pulse programmable power supply 119generates, during time t2, a train of unipolar negative voltage DCpulses with a frequency f2 and amplitude V2. In this case, the partialpulsed DC non-resonance mode exists. The amplitude A of the voltageoscillations is about 30-80% of the voltage amplitude V2. At the end ofthe pulse, the positive voltage pulse 130 can be added by activating apositive voltage power supply connected to the output of the secondtunable PFN or PCN. If the high-power pulse programmable power supply120 generates unipolar voltage pulses with a frequency f3 and amplitudeV4 during time t3, the resonance mode exists in the PFN 124 or PCN. Theresonance mode generates an asymmetrical AC voltage waveform. Thenegative voltage amplitude V5 exceeds the amplitude of the input voltagepulses V4 as shown in FIG. 2 (d). In some embodiments, the amplitude ofthe voltage pulses V4 is −1200 V, the amplitude of the negative voltageV5 is −1720 V. and the amplitude of the positive voltage V6 is +280 V.In some embodiments, the amplitude of the voltage pulses V4 is −1500 V,and amplitude of the negative voltage V5 is −1720 V. The amplitude ofthe output positive voltage V6 is +780 V. Different configurations ofthe second tunable PFN or PCN that can be used to generate asymmetricalAC voltage waveforms are shown in FIGS. 2 (e, f).

In some embodiments, the high-power pulse programmable power supplypulsing 120 can generate a train of unipolar negative voltage DC pulseswith different amplitudes V7, V8, and frequencies f4, f5 as shown inFIG. 3 (a). There is a resonance mode in the second tunable PFN or PCN124 when the output negative voltage amplitudes V9, V10 exceed theamplitude of the input voltage pulses V7, V8 as shown in FIG. 3 (b).During a negative portion of the asymmetrical AC discharge, a surface ofthe hollow cathode target 103 emits secondary electrons due to ionbombardment, and during the positive portion of the asymmetrical ACdischarge, the hollow cathode 103 absorbs electrons. The reduced amountof electrons in the plasma generates a positive plasma potential. Thisplasma potential accelerates ions towards the substrate.

During a reactive sputtering process, a positive electrical charge isformed on the hollow cathode target surface 107 due to reactive feed gasinteraction with the hollow cathode target surface 107. The positivevoltage of the asymmetrical high voltage AC waveform attracts electronsto the hollow cathode target surface. These electrons discharge apositive charge on top of the cathode target surface 107 andsignificantly reduce or completely eliminate the probability of arcing.Since the electrons are absorbed by the hollow cathode target surface107, it is possible to generate a positive space charge in the plasma.The positive space charge provides additional energy to the ions in theplasma and leads the ions toward the substrate and hollow cathode targetwalls. The positive voltage applied to the cathode target surface canattract negative ions that were formed when the negative voltage wasapplied to the target surface and, therefore, reduce substrate ionbombardment.

The second tunable PFN or PCN 124 can be connected with a plurality ofelectrical switches 140-142. The switches 140, 141, 142 are connected toseparate magnetron sputtering sources 150, 151, 152 as shown in FIG. 4(a). For example, during operation, the train 1 of pulses of highvoltage AC waveform is directed to the sputtering source 150, and thetrain 2 of pulses of high voltage AC waveform is directed to thesputtering source 151 as shown in FIG. 4 (b). In this approach, smallsize sputtering sources can provide large area sputtering.

The hollow cathode magnetron 101 from the magnetically and electricallyenhanced HEDP sputtering source 100 is mounted inside a vacuum chamber401 to construct the magnetically and electrically enhanced HEDPsputtering apparatus 400 shown in FIG. 5 (a). The vacuum chamber 401contains feed gas and plasma and is coupled to the ground. The vacuumchamber 401 is positioned in fluid communication with a vacuum pump 402,which can evacuate the feed gas from the vacuum chamber 401. Typicalbaseline pressure in the vacuum chamber 401 is in a range of 10⁻⁶ to10⁻⁹ Torr.

A feed gas is introduced into the vacuum chamber 401 through a gas inlet404 from feed gas sources. A mass flow controller 404 controls gas flowto the vacuum chamber 401. In an embodiment, the vacuum chamber 401 hasa plurality of gas inlets and mass flow controllers. The gas flow is ina range of 1 to 100000 SCCM depending on plasma operating conditions,pumping speed of a vacuum pump 403, process conditions, and the like.Typical gas pressure in the vacuum chamber 401 during a sputteringprocess is in a range of 0.5 to 50 mTorr. In some embodiments, aplurality of gas inlets and a plurality of mass flow controllers sustaina desired gas pressure during the sputtering process. The plurality ofgas inlets and a plurality of mass flow controllers may be positioned inthe vacuum chamber 401 at different locations. The feed gas can be anoble gas, such as Ar, Ne, Kr, Xe; a reactive gas, such as N₂, O₂; orany other gas suitable for sputtering or reactive sputtering processes.The feed gas can also be a mixture of noble and reactive gases.

The magnetically enhanced HEDP sputtering apparatus 400 includes asubstrate support 408 that holds a substrate 407 or other workpiece forplasma processing. The substrate support 408 is electrically connectedto a bias voltage power supply 409. The bias voltage power supply 409can include a radio frequency (RF) power supply, alternating current(AC) power supply, very high frequency (VHF) power supply, and/or directcurrent (DC) power supply. The bias power supply 409 can operate incontinuous mode or pulsed mode. The bias power supply 409 can be acombination of different power supplies that can provide differentfrequencies. The negative bias voltage on the substrate is in a range of0 to −2000 V. In some embodiments, the bias power supply generates apulse bias with different voltage pulse frequency, amplitude, and shape,as shown in FIG. 4 (b). In some embodiments, the voltage is a pulsevoltage. The negative substrate bias voltage can attract positive ionsto the substrate. The substrate support 408 can include a heater 414that is connected to a temperature controller 421. The temperaturecontroller 421 regulates the temperature of the substrate 407. In anembodiment, the temperature controller 420 controls the temperature ofthe substrate 407 to be in a range of −100 C to (+1000) C.

In some embodiments, the hollow cathode target material is copper, andthe substrate is a semiconductor wafer with at least one via or trench.The semiconductor wafer diameter is in the range of 25 to 450 mm. Thedepth of the via can be between 100 A and 400 μm. The via can have anadhesion layer, barrier layer, and seed layer. Typically, the seed layeris a copper layer. The copper layer can be sputtered with the HEDPmagnetron discharge as shown in FIG. 5 (c).

A method of sputtering films, such as hard carbon, includes thefollowing conditions. The feed gas pressure can be in the range of 0.5to 50 mTorr. The substrate bias can be between 0 V and −120 V. Thesubstrate bias voltage can be continuous or pulsed. The frequency of thepulsed bias can be in the range of 1 Hz and 400 kHz. The substrate biascan be generated by the RF power supply and matching network. The RFfrequency can be in the range of 500 kHz and 27 MHz. The RF bias can becontinuous or pulsed. In an embodiment, during the deposition, thesubstrate can have a floating potential or be grounded. The high-powerpulsed power supply 120 generates a train of negative unipolar voltagepulses with frequency and amplitude that provide a resonance mode in thesecond tunable PFN or PCN 124. In this case, second tunable PFN or PCN124 generates the high voltage asymmetrical AC waveform and, therefore,generates HEDP discharge. The negative AC voltage can be in the range of−1000 to −10000 V. The duration of the high pulse voltage asymmetricalAC waveforms can be in the range of 1 to 20 msec. The substratetemperature during the sputtering process can be in the range of −100 Cand +200 C. The hardness of the diamond-like coating formed on thesubstrate can be in the range of 5 to 70 GPa. The concentration of sp3bonds in the carbon film can be in the range of 10-80%. In someembodiments, the concentration of sp2 bonds in the carbon film can be inthe range of 80 and 100%. In some embodiments, the feed gas is a noblegas such as Ar, He, Ne, and Kr. In some embodiments, the feed gas is amixture of a noble gas and hydrogen. In some embodiments, the feed gasis a mixture of a noble gas and a gas that contains carbon atoms. Insome embodiments, the feed gas is a mixture of a noble gas and oxygen inorder to sputter oxygenated carbon films CO_(x) for non-volatile memorydevices or any other devices. The oxygen gas flow can be in the range of1-10000 sccm. The discharge current density during the sputteringprocess can be 0.2-20 A/cm². In some embodiments, the amorphous carbonfilms are sputtered for non-volatile memory semiconductor-based devices,for any other semiconductor-based devices, or for tribologicalapplications to reduce friction between two moving surfaces, such as onpiston rings for automotive applications, or medical implants, such aships, screws, and stents, or cutting objects, such as scalpels,scissors, or hair removal blades.

In some embodiments, the HEDP source with an asymmetric AC discharge canbe used to deposit thin-film materials for the manufacturing ofphase-change random-access memory (PCRAM) and resistive random-accessmemory (ReRAM) devices. PCRAM and ReRAM can improve speed, powerefficiency, and reliability of storage and retrieval as software anddata are retained even when power is absent. In some embodiments, it canbe used to form thin film gate wires with extremely low switching lossesin picojoules at higher switching frequencies.

In some embodiments, the hollow cathode target material is aluminum. Thefeed gas can also be a mixture of argon and oxygen, or argon andnitrogen. The feed gases pass through a gas activation source. In someembodiments, feed gasses pass directly to the vacuum chamber. PFN or PCN124 generates the asymmetrical high voltage AC waveform to provide HEDPmagnetron discharge to sputter hard α-Al₂O₃ or γ-Al₂O₃ coating on thesubstrate. The substrate temperature during the sputtering process is inthe range of 350 to 800 C.

HEDP magnetron discharge can be used for sputter etching the substratewith ions from sputtering target material atoms and gas atoms. A methodof sputter etch processing with argon ions and sputtered target materialions uses high negative substrate bias voltage in the range of −900 to−1200 V. The gas pressure can be in the range of 1 to 50 mTorr. Thepulse power supply generates a train of negative unipolar voltage pulseswith frequency and amplitude that provide resonance mode in the secondtunable PFN or PCN 124. In this case, the PFN or PCN 124 generates thehigh voltage asymmetrical AC voltage waveform that provides HEDPdischarge. For example, a sputter etch process can be used to sharpen orform an edge on a substrate for cutting applications, such as surgicaltools, knives, inserts for cutting tools, or razor blades for hairremoval applications, or for cleaning a substrate by removing impuritiesto enhance adhesion. HEDP magnetron discharge also can be used for ionimplantation of ions from sputtered target material atoms into asubstrate. For ion implantation, the negative bias voltage on thesubstrate can be in the range of −900-15000 V. An ion implantationexample includes the doping of a silicon-based device or ionimplantation to enhance thin film adhesion to the substrate where thelayer is forming.

In some embodiments, the electrically enhanced HEDP magnetron sputteringsource can be used for chemically enhanced I-PVD deposition (CE-IPVD) ofmetal containing or non-metal films. For example, in order to sputtercarbon films with different concentrations of sp3 bonds in the film, thecathode target may be made from carbon material. The feed gas can be anoble gas and carbon atoms containing gas, such as C₂H₂, CH₄, or anyother gases. The feed gas can also contain H₂. Carbon films on thesubstrate are formed by carbon atoms from the feed gas and from carbonatoms from the cathode target. The carbon films on the substrate areformed by carbon atoms from the feed gas.

The advanced thin films, such as but not limited to carbon films,sputtered with the electrically enhanced HEDP magnetron sputteringsource with noble gas, such as Argon, Neon, Helium and the like, orreactive gas, such as Hydrogen, Nitrogen, Oxygen, and the like can beused for hard mask applications in etch processes, such as 3D NAND; forprotectively coating parts, such as bearings, camshafts, gears, fuelinjectors, cutting tools, inserts for cutting tools, carbide inserts,drill bits, broaches, reamers, razor blades for surgical applicationsand hair removal, hard drives, solar panels, optical filters, flat paneldisplays, thin film batteries, batteries for storage, hydrogen fuelcell, cutleries, jewelry, wrist watch cases and parts, coating metal onplastic parts such as lamps, air vents in cars, aerospace applications,such as turbine blades and jet engine parts, jewelry, plumbing parts,pipes, and tubes; medical implants, such as stents, joints, cell phone,mobile phone, iPhone, iPod, touch screen, hand held computing devices,application specific integration circuits and the like.

The carbon films sputtered with the electrically enhanced HEDP magnetronsputtering source can be used to sputter thin ta-C and CO_(x) films forcarbon-based resistive memory devices or as transistor gate wires.

In some embodiments, the HEDP magnetron discharge with a carbon targetis used to grow carbon nanotubes. In some embodiments, these nanotubesare used to build memory devices, cosmetics, transistors and switchingdevice gate wires, and/or power electronics.

During the HEDP sputtering process, when the high-power pulse asymmetricAC voltage waveform is applied to the magnetically enhanced sputteringsource, a pulse bias voltage can be applied to the substrate to controlion bombardment of the growing film. In some embodiments, during theHEDP sputtering process, when the high-power pulse asymmetric AC voltagewaveform is applied to the magnetically enhanced sputtering source, apulse bias voltage can be applied to the substrate to control ionbombardment of the growing film. The amplitude of the negative voltagecan be in the range of −10 V and −200 V. Trains of asymmetrical ACvoltage waveforms 602 are shown in FIG. 6 (a). Trains of negativevoltage DC pulses 603 applied to the substrate are shown in FIG. 6 (b).In order to control time t1 when bias voltage pulse is applied to thesubstrate, the high-power pulse resonance AC power supply and bias powersupply are synchronized. In this case, the controller from thehigh-power pulse resonance AC power supply sends synchronization pulsesthat correspond to the trains of asymmetrical AC voltage waveforms tothe controller from the bias power supply. The bias power supplycontroller can set time Δt1 in the range of 0-1000 μs.

In some embodiments, the bias power supply includes an RF power supply.FIG. 6 (c) shows a train of RF pulses 604 generated by the RF bias powersupply.

The method of generating resonance AC voltage waveforms for themagnetically enhanced sputtering source can also be used to generateresonance AC waveforms for the cathodic arc evaporation sources thathave widespread applications in the coating industry. Resonance ACvoltage wave waveforms, when connected with a magnetically enhancedsputtering source, generate volume discharge. Resonance AC voltagewaveforms, when connected with an arc evaporation source, generate pointarc discharge. DC power supplies generate and sustain continuous arcdischarge on an arc evaporation source with a carbon target. The arccurrent can be in the range of 40-100 A. The arc discharge voltage canbe in the range of 20-120 V. A regulated voltage with a variable powersource feeds the high-power pulse programmable power supply.Specifically, the high-power pulse asymmetric AC voltage waveform isgenerated by having the regulated voltage source with variable powerfeeding a regulated voltage to the high-power pulse supply withprogrammable pulse voltage duration and pulse voltage frequencyproducing at its output a train of regulated amplitude unipolar negativevoltage DC pulses with programmed pulse frequency and duration, andsupplying these pulses to a second tunable pulse forming network (PFN)or pulse converting network (PCN) including a plurality of specializedinductors and capacitors designed for pulse applications connected in aspecific configuration coupled to an arc evaporation source. Theresonance occurs in the PFN or PCN and in the already existing arcdischarge generated by the DC power supply. By adjusting the pulsevoltage amplitude, duration, and frequency of the unipolar negativevoltage DC pulses and tuning the values of the inductors and capacitorsin the second PFN or PCN coupled to an arc evaporation source, aresonance pulsed asymmetric AC arc discharge can be achieved.

Another method of producing a resonance pulsed asymmetric AC arcdischarge is to have fixed unipolar pulse power supply parameters(amplitude, frequency, and duration) feeding a pulse forming network, inwhich the numerical values of the inductors and capacitors, as well astheir configurations, are tuned to achieve the desired resonance valueson the arc evaporation source to form a layer on the substrate. Thetuning of the second PFN or PCN can be performed manually with testequipment, such as an oscilloscope, voltmeter, and current meter orother analytical equipment; or electronically with a built-in softwarealgorithm, variable inductors, variable capacitors, and data acquisitioncircuitry. The negative voltage from the pulse asymmetric AC voltagewaveform generates high-density plasma from the evaporated targetmaterial atoms between the cathode target and the anode of the arcevaporation source. The positive voltage from the pulse asymmetrical ACvoltage waveform attracts plasma electrons to the cathode area andgenerates positive plasma potential. The positive plasma potentialaccelerates evaporated target material ions from the cathode target areatowards the substrate that improves deposition rate and ion bombardmenton the substrate. The reverse electron current can be up to 50% from thedischarge current during the negative voltage. In some embodiments, thearc evaporation source may have one of a rotatable magnetic field,movable magnetic field, or stationary magnetic field. The second tunablePFN or PCN includes a plurality of capacitors and inductors. Theresonance mode associated with the second tunable PFN or PCN is afunction of the input unipolar voltage pulse amplitude, duration, andfrequency generated by the high-power pulse power supply; inductance,resistance, and capacitance of the arc evaporation source, or any othermagnetically enhanced arc evaporation source; the inductance,capacitance, and resistance of the cables between the second tunable PFNor PCN and arc evaporation source; and a plasma impedance of the arcevaporation source itself as well as the evaporated material. In theresonance mode, the output negative voltage amplitude of the high-powerpulse voltage mode asymmetrical AC waveform on the arc evaporationsource exceeds the negative voltage amplitude of the input unipolarvoltage pulses into the second tunable PFN or PCN by 1.1-5 times. Theunipolar negative high-power voltage output can be in the range of400V-5000V. In the resonance mode, the absolute value of the negativevoltage amplitude of the asymmetrical AC waveform can be in the range of750-5000 V. In the resonance mode, the output positive voltage amplitudeof the asymmetrical AC waveform can be in the range of 100-2500 V.

In the resonance mode, the negative voltage amplitude of the output ACwaveform can reach a maximum absolute value at which point a furtherincrease of the input voltage to the second tunable PFN or PCN will notresult in a voltage amplitude increase, but rather an increase in theduration of the negative pulse in the asymmetric AC waveform. In someembodiments, in the resonance mode, the negative voltage amplitude ofthe output AC waveform can reach a maximum absolute value, at whichpoint a further increase of the input voltage to the second tunable PFNor PCN will result in a positive voltage amplitude increase. In someembodiments, the frequency of the unipolar voltage pulses is in therange of 1 kHz and 10 kHz. In some embodiments, the duration of theunipolar voltage pulses is in the range of 3-20 μs. In some embodiments,the duration of the unipolar voltage pulses is in the range of 0.01-2.9μs. In some embodiments, the duration of the unipolar voltage pulses isin the range of 20-2000 μs. Asymmetrical AC voltage waveformssignificantly influence the size of the cathode arc spot and velocity.In some embodiments, the generation of the resonance AC voltagewaveforms reduces the formation of macro-particles from the evaporatedcathode target material. The arc discharge current during the negativeportion of the AC voltage can be in the range of 200-3000 A. The arcdischarge current during the positive portion of the AC voltage has alower value and can be in the range of 10-500 A. The arc AC dischargecurrent and arc discharge AC voltage waveforms are shown in FIG. 13.

In an embodiment, a high-power pulse resonance AC power supply 700, ascompared with the high-power pulse resonance AC power supply 102 shownin FIG. 1(g), includes a high-frequency high-power pulsed power supply701 with a programmable voltage pulse frequency and amplitude as shownin FIG. 8 (a). The high frequency high-power pulsed power supply 701generates pulse negative, unipolar oscillatory voltage waveforms with afrequency in the range of 100 KHz to 5 MHz and a duration t1 in a rangeof 0.05 μs to 200 μs. The absolute value of the voltage of thesewaveforms is in a range of 500 V to 5000 V. The frequency of thesepulses with negative unipolar voltage waveforms is in a range of 5 Hz to200 KHz.

Pulse negative unipolar oscillatory voltage waveforms 800 are shown inFIG. 8 (c). The second tunable PFN or PCN 124, which is in resonancemode for these pulses, generates a high-power resonance asymmetrical ACwaveform. The resonance mode can be achieved by adjusting the values ofinductors L1, L2, L3, and L4, and by adjusting the values of capacitorsC1 and C2 for a particular shape of the pulse negative unipolaroscillatory voltage waveforms, their frequency, type of process gas,target material, and magnetic field strength of the hollow cathodesputtering source 702. The resonance mode is defined as the prevailingconditions when the adjustment of the frequency and amplitude of theplurality of negative unipolar oscillatory voltage waveforms 800generate the plurality of asymmetrical AC voltage waveforms 801 withpositive V+ and negative V− voltages shown in FIGS. 8 (c, d). Furtherincrease of the oscillatory voltage waveform amplitude causes anincrease in the value of the positive portion of the AC voltagewaveform. By adjusting time t1, r t2, or both t1 and t2, double negativepeak asymmetrical AC voltage waveforms 802 can be achieved as shown inFIG. 8 (d). FIG. 8 (b) shows a partial modulated pulsed dc non-resonancepulse discharge.

In an embodiment, a magnetically and electrically enhanced HEDPsputtering source 100 shown in FIG. 1(g) has a hollow cathode target 103that includes two parts as shown in FIG. 9 (a) and FIG. 9 (b). FIG. 9(a) shows the hollow cathode target 103 that includes pieces 703 and705. These two pieces are attached to a copper backing plate by a clamp704. FIG. 9 (b) shows the hollow cathode target that includes pieces 707and 708. These two pieces are bonded to a copper backing plate 706. Themagnetically and electrically enhanced HEDP sputtering source can have adiameter in the range of 1 cm to 100 cm. The peak power density can bein the range of 100 W/cm² to 20 kW/cm². The average power density can bein the range of 50 W/cm² to 150 W/cm².

In an embodiment, the hollow cathode target 103 includes two pieces 710and 709 as shown in FIG. 10 (a). The piece 709 has magnetic field lines715 and the piece 710 has magnetic field lines 714. Each of these piecesis connected to different high-power pulse resonance AC power supplies711 and 712. The block diagram of these high-power pulse resonance ACpower supplies is shown in FIG. 8 (a). The high-power pulse resonance ACpower supplies 711 and 712 generate AC voltage waveforms 715 and 716shown in FIGS. 10 (a) and 10 (b). A time shift between negative voltagepeaks 717 and 718 is controlled by controller 719. In an embodiment, thepower supply 711 sends a synchro pulse to power supply 712 to initiatethe start of power supply 712. In an embodiment, the power supply 712sends a synchro pulse to power supply 711 to initiate the start of powersupply 711.

In an embodiment, a magnetically enhanced HEDP sputtering source that isshown in FIG. 1 (g) includes an additional magnetic assembly positionedadjacent to the side walls 104 as shown in FIG. 1 (h). The magneticassembly may have permanent magnets, electromagnets, or a combination ofpermanent magnets and electromagnetics.

The method of generating resonance AC voltage waveforms for themagnetically enhanced sputtering source and high-power pulse resonanceAC power supply 700 can also be used to generate resonance AC waveformsfor cathodic arc evaporation sources. High-power pulse resonance ACpower supply 700 can be used for all applications in which thehigh-power pulse resonance AC power supply 102 can be used.

In an embodiment, a high-power pulse resonance AC power supply 810includes an AC power supply 811 and PFN 812 as shown in FIG. 11.High-power AC power supply 811 can generate different AC voltagewaveforms at the output as shown in FIGS. 12 (a, b, c, d, e, f). Thefrequency of these voltage waveforms can be in the range of 3 KHz to 100KHz. The peak voltage amplitude can be in the range of 100 V to 1000 V.The PFN includes a step-up transformer 813, a diode bridge 814, aplurality of inductors 815, 816, 817, 818 and a plurality of capacitors819 and 820. This PFN converts AC voltage waveforms to an asymmetricalcomplex AC voltage waveform during the resonance mode as shown in FIG.11. AC voltage waveforms and frequencies that correspond to thisparticular AC voltage waveform are associated with specific values ofinductors (815, 816, 817 and 818) and capacitors (819, 820) in order togenerate the resonance mode and form, at the output, the asymmetrical ACvoltage waveform. In an embodiment, the PFN does not have a diodebridge.

In an embodiment, the high-power pulse resonance AC power supply can beconnected to the HEDP magnetron sputtering source and RF power supplysimultaneously. The frequency of the RF power supply can be in the rangeof 500 kHz to 30 MHz. The RF power supply can operate in continuous modeor pulsed mode. In an embodiment, the RF power supply turns on beforethe high-power pulse resonance AC power supply turns on in order toprovide stable plasma ignition for plasma that will be generated withthe high-power pulse resonance AC power supply. The RF power supply canbe turned off after the high-density plasma is generated. In anembodiment, the RF power supply operates in continuous mode togetherwith the high-power pulse resonance AC power supply. This operationreduces parasitic arcs during the reactive sputtering process. Thisoperation is beneficial for sputtering ceramic target materials andtarget materials with low electrical conductivity, such as thosecontaining B, Si, and the like.

The output voltage waveforms from the high-power pulse resonance ACpower supply are shown in FIG. 14 (a, b). The second negative peak 812can be generated by controlling parameters of the PFN, such asinductors, capacitors and the transformer (if applicable) as shown inFIG. 14 (a). The peak 812 has a significant influence on the probabilityof generating arcs during reactive sputtering. The plasma that isgenerated during this peak helps to ignite high-density plasma duringthe first negative peak 811. The second peak 812 may be triangular,sinusoidal or rectangular in shape. The rectangular shape of the secondnegative peak 814 is shown in FIG. 14 (b). The value and duration of thepeak 812 helps to control the energy of ions coming to the substrate.The duration t_(s) can be in the range of 2 μs to 50 μs. The amplitudeV_(s) can be in the range of 200 V to 1000 V. The greater the amplitudeand/or duration of the second peak is, the less the ion energy will be.This arrangement is of particular importance for sputtering ta-C filmswhen high ion energy can affect the structure of the growing film.

A high-power pulse resonance AC power source 500 is shown in FIG. 15(a), and includes a HIPMIS power supply 540, which includes a regulatedvoltage source with variable power feeding 511, a high-power pulsedpower supply 512 with built-in PFN 502 and programmable voltage pulsefrequency and amplitude, and a second tunable PFN or pulse converternetwork (PCN) 510. The high-power pulsed power supply with programmablevoltage pulse frequency and amplitude 540 includes a computer 509 andcontroller 508. The regulated voltage source with variable power feeding511 supplies voltage in the range of 400-5000 V to the high-power pulsedpower supply 512 with built-in PFN 502 with programmable voltage pulsefrequency and amplitude. The high-power pulsed power supply withprogrammable voltage pulse frequency and amplitude 540 generates andprovides a train of unipolar negative voltage DC pulses to the tunablePCN 510. The amplitude of the unipolar negative voltage DC pulses is inthe range of 400 to 5000 V, and the duration of each of the voltagepulses is in the range of 1 to 100 μs. The distance between voltagespulses is in the range of 0.4 to 1000 μs, thus controlling the frequencyto be between 0.1 to 400 kHz. In some embodiments, there is a step-up ora step-down transformer (not shown) between the high-power pulsed powersupply 512 with the built in PFN 502 with programmable voltage pulsefrequency and amplitude and the tunable PCN 510 to achieve a desiredpulsed resonance AC asymmetric discharge on an HEDP source 100. Thetunable PCN 510 includes a plurality of specialized variable inductorsL1-Ln and a plurality of specialized variable capacitors C1-Cn 503 forhigh-power pulse applications. The value of these inductors andcapacitors 503 can be controlled by a central processing unit (CPU) 507.In some embodiments, at least one inductor and/or at least one capacitor503 is variable, and their values are computer controlled. The values ofinductors L1-Ln are in the range of about 0 to 1000 μH each. CapacitorsC1-Cn have values in the range of 0 to 1000 μF each. The high-powerpulse programmable power supply 540 is connected to controller 508and/or computer 509. Controller 508 and/or computer 509 control outputvalues and timing of the power supply 540. The power supply 540 can alsooperate as a standalone unit without connection to the controller 508and/or computer 509.

The high energy density plasma (HEDP) magnetically enhanced sputteringsource 100, which generates a pulse resonance asymmetric AC plasmadischarge 545, is also shown in FIG. 15 (a) and includes output currentand voltage monitors 542, 543, respectively. The current and voltagemonitors 542, 543 are connected to an arc suppression circuit 127. Ifthe current monitor 542 detects a high current and the voltage monitor543 detects a low voltage, the arc suppression circuit 127 is activated.It is to be noted that the voltage monitor 543 is connected to an outputof the tunable PCN 510. The arc suppression circuit 127 provides asignal to stop generating incoming voltage pulses from the power supply540 to the tunable PCN 510, and connects the output of the tunable PCN510 through switch 131 to ground or to a positive electrical potentialgenerated by a power supply 130 to eliminate arcing as shown in FIG. 15(a). The hollow cathode is shown as a C-shaped structure 514 coupled tothe output of the tunable PCN 510.

In FIGS. 15 (b),(c), the unipolar negative pulsed DC output from powersupply 540 is programmed to produce a plurality of pulses with twodifferent voltage levels V7, V8, and defined pulse width and frequencyin two defined timed pulse bursts B1, B2 that are fed to the tunable PCN510 causing a pulsed resonance AC asymmetric discharge on the HEDPsource 100. In resonance, V7<V9, V8<V10, and the value of the resonancepositive voltage on the output of the tunable PCN 510 is directlycorrelated to the pulsed resonance current during the negative cycle.

In FIGS. 15 (d),(e), the unipolar negative pulsed DC output from powersupply 540 is programmed to produce a plurality of pulses withcontrolled voltage rise-time and fall-time with two different voltagelevels V7, V8 and defined pulse width and frequency in two defined timedpulse bursts B3, B4 feeding the tunable PCN 510 and causing a pulsedresonance AC asymmetric discharge on the HEDP source 100. In resonance,V7<V9, V8<V10, and the value of the resonance positive voltage on theoutput of the tunable PCN 510 is directly correlated to the pulsedresonance current during the negative cycle.

In FIG. 15 (f), the unipolar negative pulsed DC output from power supply540 is programmed to produce a plurality of pulses with voltage levelVim and defined pulse width and frequency in defined timed pulse burstsB5 feeding the tunable PCN 510, and causing a non-resonance discharge onthe HEDP source 100. In this case, the voltage input to the tunable PFN510 V1 is equal to voltage output V1 _(out).

In FIG. 15(g), the unipolar negative pulsed DC output from power supply540 is programmed to produce a plurality of pulses with voltage level V2and defined pulse width and frequency in defined timed pulse bursts B6feeding the second PFN or PCN 510, and causing a non-resonance pulsed DCmodulated discharge on the HEDP source 100. In this case, the voltageinput V2 to the tunable PCN 510 is equal to voltage output V3.

In FIG. 15(h), the unipolar negative pulsed DC output from power supply540 is programmed to produce a plurality of pulses with voltage level V4and defined pulse width and frequency in defined timed pulse bursts B7feeding the tunable PCN 510, and causing a resonance pulsed AC modulateddischarge on the HEDP source 100. In this case, the voltage input to thetunable PCN 510 is V4<V5 when in resonance mode. The value of voltage V6is directly correlated to the peak pulsed resonance current during thenegative cycle and the pulse switching frequency from power supply 540.

In FIG. 15(i), the unipolar negative pulsed DC output from power supply540 with defined pulse voltage rise-time and fall-time is programmed toproduce a plurality of pulses with voltage level V1 and defined pulsewidth and frequency in defined timed pulse bursts B8 feeding the tunablePCN 510, and causing a non-resonance discharge on the HEDP source 100.In this case, the voltage input to the tunable PCN 510 V1 is equal tovoltage output V1 out.

In FIG. 15(j), the unipolar negative pulsed DC output from power supply540 with defined pulse voltage rise-time and fall-time is programmed toproduce a plurality of pulses with voltage level V2 with defined pulsewidth and frequency in defined timed pulse bursts B9 feeding the tunablePCN 510 causing a non-resonance pulsed DC modulated discharge on theHEDP source 100. In this case, the voltage input V2 to the tunable PCN510 is equal to the voltage output V3.

In FIG. 15(k), the unipolar negative pulsed DC output from power supply540 with defined pulse voltage rise-time and fall-time is programmed toproduce a plurality of pulses with voltage level V4 and defined pulsewidth and frequency in defined timed pulse bursts B10 feeding thetunable PCN 510 causing a resonance pulsed AC modulated discharge on theHEDP source 100. In this case, the voltage input to the tunable PCN 510is V4<V5 when in resonance mode. The value of voltage V6 is directlycorrelated to the peak pulsed resonance current during the negativecycle and the pulse switching frequency from power supply 540.

In FIGS. 15 (l),(m), the unipolar negative pulsed DC output from powersupply 540 is programmed to produce a plurality of pulses with twodifferent controlled voltage levels V7, V8 and defined pulse width andfrequency in two defined timed pulse bursts B12, B13, in which B11 isthe sum of B12 and B13, feeding the tunable PCN 510, and causing a mixeddischarge with pulsed non-resonance and pulsed resonance AC asymmetricdischarge on the HEDP source 100. In resonance, V7=V9, V8<V10, and thevalue of the resonance positive voltage on the output of the tunable PCN510 is directly correlated to the peak pulsed resonance current duringthe negative cycle and the pulse switching frequency from power supply540.

A magnetically and electrically enhanced HEDP sputtering source 100shown in FIG. 16 (a) includes a hollow cathode magnetron 101 and thehigh-power pulse power supply 540, which includes the high-power AC/DCconvertor and cap charger source 508, 509, the high-power pulsed powersupply with programmable voltage pulse frequency and amplitude 512 withbuilt-in PFN 502, and the tunable PCN 503, which in resonance mode,generates a high-power resonance asymmetrical AC waveform.

The hollow cathode magnetron 101 includes a hollow cathode target 103.The hollow cathode target 103 has side walls 104 and a bottom part 105as shown in FIGS. 16 (a), (b). An anode 106 is positioned around theside walls 104. Magnets 107, 108 and magnetic pole piece 109 arepositioned inside a water jacket 110. The water jacket 110 is positionedinside a housing 111. The hollow cathode target 103 is bonded to acopper backing plate 112. Magnets 107, 108 and magnetic pole piece 109generate magnetic field lines 113, 114 that terminate on the bottom part105 and form a magnetron configuration and some of the magnetic field113, 114 terminates on the side wall. Magnetic pole piece 109 ispositioned on a supporter 124. Magnetic field lines 115, 116 terminateon the side walls 104. Water jacket 110 has a water inlet 117 and awater outlet 118. The water inlet 117 and water outlet 118 are isolatedfrom housing 111 by isolators 121. Water jacket 110 and, therefore,hollow cathode target 101 are connected to the tunable PCN 510 and thePCN 510 generates the resonance asymmetric AC discharge on the hollowcathode, which is connected to the high-power pulse power supply 540.The following chemical elements, or a combination of any two or more ofthese elements, can be used as a cathode material: B, C, Al, Si, P, S,Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re,Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,Be, Mg, Ca, Sr, and/or Ba. A combination of these chemical elements withthe gases O2, N2, F, Cl, and/or H2 can also be used as the cathodematerial.

A magnetically and electrically enhanced HEDP sputtering source 100shown in FIG. 17 (a) includes a hollow cathode magnetron 101 and thehigh-power pulse power supply 540, which includes the high-power AC/DCconvertor and cap charger source 508,509, the high-power pulsed powersupply with programmable voltage pulse frequency and amplitude 512, andbuilt-in PFN 502, and the tunable PCN 503, and voltage and currentmonitor 504, which in resonance mode, generates a high-power resonanceasymmetrical AC waveform.

The hollow cathode magnetron 101 includes a hollow cathode target 516.The hollow cathode target 516 has side walls 515 machined on an anglewith a range of about 1-75 degrees, a bottom part 514, and a center post541 that can be shaped as a straight cylinder, which is hollow or solid.The walls of the cylinder 541 can be machined on an angle with a rangeof about 1-75 degrees, as shown in FIGS. 17 (a), (b). An anode 106 ispositioned around the side walls 515. Magnets 107, 108, and magneticpole piece 109 are positioned inside a water jacket 110. The waterjacket 110 is positioned inside a housing 111. The hollow cathode target516 is bonded to a copper backing plate 112. Magnets 107, 108 andmagnetic pole piece 109 generate magnetic field lines 113, 114 thatterminate on the bottom part 514 and form a magnetron configuration.Some of the magnetic fields 113, 114 terminate on the side wall 516 andcenter pole 541. Magnetic pole piece 109 is positioned on a supporter124. Magnetic field lines 115, 116 terminate on the side walls 515 andcenter pole 541. Water jacket 110 has a water inlet 117 and a wateroutlet 118. The water inlet 117 and water outlet 118 are isolated fromhousing 111 by isolators 121. Water jacket 110 and, therefore, hollowcathode target 101 are connected to a PCN 503, and the PCN 503 producesthe resonance asymmetric AC discharge on the hollow cathode that isconnected to the high-power pulse power supply 540 producing unipolarnegative voltage pulses. The following chemical elements, or acombination of any two or more of these elements, can be used as acathode material: B, C, Al, Si, P, S, Ga, Ge, As, Se, In, Sn, Sb, Te, I,Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru,Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm,Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Be, Mg, Ca, Sr, and/or Ba. Acombination of these chemical elements with the gases O2, N2, F, Cl,and/or H2 can also be used as the cathode material.

A magnetically and electrically enhanced HEDP sputtering source 100shown in FIG. 18 (a) includes the hollow cathode magnetron 101 and thehigh-power pulse power supply 540, which includes the high-power AC/DCconvertor and cap charger source 508,509, the high-power pulsed powersupply with programmable voltage pulse frequency and amplitude 512 withbuilt-in PFN 502, tunable PFN or PCN 503, which in resonance mode,generates a high-power resonance asymmetrical AC waveform, and a highfrequency generator 518 operating in continuous or pulsed mode at 100kHz to 60 MHz with a matching network. The output frequency can be amixed frequency from high frequency generator 518. The high frequencygenerator 518 output and the PCN 503 can be synchronized to be pulsedin-phase or out-of-phase with the output of the PCN 503.

The hollow cathode magnetron 101 includes a hollow cathode target 103.The hollow cathode target 103 has side walls 104 and a bottom part 105as shown in FIGS. 18 (a), (b). An anode 106 is positioned around theside walls 104. Magnets 107, 108, and magnetic pole piece 109 arepositioned inside a water jacket 110. The water jacket 110 is positionedinside a housing 111. The hollow cathode target 103 is bonded to acopper backing plate 112. Magnets 107, 108 and magnetic pole piece 109generate magnetic field lines 113, 114 that terminate on the bottom part105 and form a magnetron configuration and some of the magnetic field113, 114 terminates on the side wall. Magnetic pole piece 109 ispositioned on a supporter 124. Magnetic field lines 115, 116 terminateon the side walls 104. Water jacket 110 has a water inlet 117 and awater outlet 118. The water inlet 117 and water outlet 118 are isolatedfrom housing 111 by isolators 121. Water jacket 110 and, therefore,hollow cathode target 101 are connected to a high frequency generator518 and a PFN or PCN 503, and the PFN or PCN 503 provides the resonanceasymmetric AC discharge on the hollow cathode connected to a high-powerpulse power supply 540 producing unipolar negative voltage pulses. Thefollowing chemical elements, or a combination of any two or more ofthese elements, can be used as a cathode material: B, C, Al, Si, P, S,Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re,Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,Be, Mg, Ca, Sr, and/or Ba. A combination of these chemical elements withthe gases O2, N2, F, Cl, and/or H2 can also be used as the cathodematerial.

The hollow cathode magnetron 101 from the magnetically and electricallyenhanced HEDP sputtering source 100 is mounted inside a vacuum chamber401 to construct the magnetically and electrically enhanced HEDPsputtering apparatus 519 shown in FIG. 19 (a). The vacuum chamber 401contains feed gas and plasma, and is coupled to ground. The vacuumchamber 401 is positioned in fluid communication with a vacuum pump 402,which can evacuate the feed gas from the vacuum chamber 401. Typicalbaseline pressure in the vacuum chamber 401 is in a range of 10-6 to10-9 Torr. The vacuum chamber contains a ring RF HDP gas source ormagnetically enhanced chemical vapor deposition (CVD) source 520connected to an RF power supply 524 in the range of about 1-60 Mhz, andtypically 13.56 MHz, and a matching network and an inductor groundingthe cathode part of the RF source or magnetically enhanced chemicalvapor deposition (CVD) source. In some embodiments, the gas source 520can be magnetically coupled to the hollow cathode magnetron 101 or thesubstrate support 408 or both. The gas source 520 improves gasdissociation and plasma ignition voltage on the hollow cathode 101. Thegas source 520 can be fed gas through a mass flow controller 404. Thegas flow is in a range of about 1 to 100000 SCCM depending on plasmaoperating conditions, pumping speed of a vacuum pump 403, processconditions, and the like. Typical gas pressure in the vacuum chamber 401during a sputtering process is in a range of about 0.5 to 1000 mTorr. Insome embodiments, a plurality of gas inlets and a plurality of mass flowcontrollers sustain a desired gas pressure during the sputteringprocess. The plurality of gas inlets and plurality of mass flowcontrollers may be positioned in the vacuum chamber 401 at differentlocations. The feed gas can be a noble gas, such as Ar, Ne, Kr, Xe, areactive gas, such as N2, O2, or any other gas suitable for sputteringor reactive sputtering processes. The feed gas can also be a mixture ofnoble and reactive gases fed through the gas source 520 or fed directlyinto the chamber.

The magnetically enhanced HEDP sputtering apparatus 400 includes asubstrate support 408 that holds a substrate 407 or other work piece forplasma processing. The substrate support 408 is electrically connectedto a bias voltage power supply 409 or multiple bias voltage power supply409. The bias voltage power supply 409 can include a radio frequency(RF) power supply, alternating current (AC) power supply, very highfrequency (VHF) power supply, and/or direct current (DC) power supply.The bias power supply 409 can operate in continuous mode or pulsed mode.The bias power supply 409 can be a combination of two different RF powersupplies that can provide different frequencies. In some embodiment, acommon exciter (CEX) phase controller can be used to eliminate unwantedbeat frequencies if two RF generators are used as a bias supply 409. Insome embodiments, a common exciter (CEX) phase controller can be used toeliminate unwanted beat frequencies between the bias RF generator 409and the RF power supply of the gas ring source 520. In this way, two RFgenerators can be phase-locked together so that the RF generators run atthe same frequency with a fixed phase relationship between theiroutputs, thereby preventing unwanted beat frequencies. The negative biasvoltage on the substrate is in a range of about 0 to −2000 V. In someembodiments, the bias power supply generates a pulse bias with differentvoltage pulse frequency, amplitude, and shape as shown in FIG. 19 (b).In some embodiments, the voltage is a pulse voltage. The negativesubstrate bias voltage can attract positive ions to the substrate. Thesubstrate support 408 can include a heater 414 that is connected to atemperature controller 421. The temperature controller 421 regulates thetemperature of the substrate 407. In an embodiment, the temperaturecontroller 420 controls the temperature of the substrate 407 to be in arange of about −100 C to (+1000) C.

A multiple hollow cathode magnetron 101 from the magnetically andelectrically enhanced HEDP sputtering source 100 connected to a PCN 503is mounted inside a vacuum chamber 401 to construct the magnetically andelectrically enhanced HEDP sputtering apparatus 582 shown in FIG. 20(a). The vacuum chamber 401 contains feed gas and plasma, and is coupledto ground. The vacuum chamber 401 is positioned in fluid communicationwith a vacuum pump 402, which can evacuate the feed gas from the vacuumchamber 401. Typical baseline pressure in the vacuum chamber 401 is in arange of about 10-6 to 10-9 Torr. The vacuum chamber contains a remoteor ring RF HDP gas source 571 connected to an RF power supply 524 in therange of about 1-60 Mhz, and typically 13.56 MHz, and a matching network546 and an inductor grounding the cathode part of the gas source 520. Insome embodiments, the gas source can be magnetically coupled to thehollow cathode magnetron 10, the substrate support 408, or both. In thisembodiment, the substrate 408 can be a single object, such as a metalblock or multiple components mounted on a substrate holder moving inrotary motion in front of the HEDP sputtering source or sources 100. Thegas source 520 improves gas dissociation and plasma ignition voltage onthe hollow cathode 101. The gas source 520 can be fed gas through a massflow controller 404. The gas flow is in a range of about 1 to 100000SCCM depending on plasma operating conditions, pumping speed of a vacuumpump 403, process conditions, and the like. Typical gas pressure in thevacuum chamber 401 during a sputtering process is in a range of about0.5 to 50 mTorr. The feed gas can be a noble gas, such as Ar, Ne, Kr,Xe, a reactive gas, such as N2, O2, or any other gas suitable forsputtering or reactive sputtering processes. The feed gas can also be amixture of noble and reactive gases through the gas source 520 or feddirectly into the chamber.

The magnetically enhanced HEDP sputtering apparatus 582 includes asubstrate support 408 that holds a substrate 407 or other work piece forplasma processing. The substrate support 408 can be stationary orrotating at about 1-200 rpm. The substrate support 408 is electricallyconnected to a bias voltage power supply 409 or multiple bias voltagepower supplies 409. The bias voltage power supply 409 can include aradio frequency (RF) power supply, alternating current (AC) powersupply, very high frequency (VHF) power supply, and/or direct current(DC) power supply. The bias power supply 409 can operate in continuousmode or pulsed mode. The bias power supply 409 can be a combination oftwo different RF power supplies that can provide different frequencies.The negative bias voltage on the substrate is in a range of about 0 to−2000 V. In some embodiments, the bias power supply generates a pulsebias with different voltage pulse frequency, amplitude, and shape asshown in FIG. 20 (b). In some embodiments, the bias power supplygenerates an AC bias with different voltage pulse frequency, amplitude,and shape as shown in FIG. 20 (C). In some embodiments, the voltage is apulse voltage. The negative substrate bias voltage can attract positiveions to the substrate. The substrate support 408 can include a heater414 that is connected to a temperature controller 421. The temperaturecontroller 421 regulates the temperature of the substrate 407. In anembodiment, the temperature controller 420 controls the temperature ofthe substrate 407 to be in a range of about −100 C to (+1000) C.

The hollow cathode magnetron 101 from the magnetically and electricallyenhanced HEDP sputtering source 100 is mounted inside a vacuum chamber401 to construct the magnetically and electrically enhanced HEDPsputtering apparatus 570 shown in FIG. 21 (a). The vacuum chamber 401contains feed gas and plasma, and is coupled to ground. The vacuumchamber 401 is positioned in fluid communication with a vacuum pump 402,which can evacuate the feed gas from the vacuum chamber 401. Typicalbaseline pressure in the vacuum chamber 401 is in a range of 10-6 to10-9 Torr. The vacuum chamber contains a remote RF HDP gas source 571connected to an RF power supply 524 in the range of about 1-60 Mhz, andtypically 13.56 MHz, a matching network 546, and an inductor groundingthe cathode part of the RF source. In some embodiments, the gas RFsource can be magnetically coupled to the hollow cathode magnetron 101,or the substrate support 408, or both. The gas source 571 improves gasdissociation and plasma ignition voltage on the hollow cathode 101. Thegas source 571 can be fed gas through a mass flow controller 404. Thegas flow is in a range of about 1 to 100000 SCCM depending on plasmaoperating conditions, pumping speed of a vacuum pump 403, processconditions, and the like. Typical gas pressure in the vacuum chamber 401during a sputtering process is in a range of about 0.5 to 50 mTorr. Thefeed gas can be a noble gas, such as Ar, Ne, Kr, Xe, a reactive gas,such as N2, O2, or any other gas suitable for sputtering or reactivesputtering processes. The feed gas can also be a mixture of noble andreactive gases through the RF source 571 or fed directly into thechamber.

The magnetically enhanced HEDP sputtering apparatus 570 shown in FIG. 21(a) includes a substrate support 408 that holds a substrate 407 or otherwork piece for plasma processing. The substrate support 408 iselectrically connected to a bias voltage power supply 409 or multiplebias voltage power supply 409. The bias voltage power supply 409 caninclude a radio frequency (RF) power supply, alternating current (AC)power supply, very high frequency (VHF) power supply, and/or directcurrent (DC) power supply. The bias power supply 409 can operate incontinuous mode or pulsed mode. The bias power supply 409 can be acombination of two different RF power supplies that can providedifferent frequencies. The negative bias voltage on the substrate is ina range of about 0 to −2000 V. In some embodiments, the bias powersupply generates a pulse bias with different voltage pulse frequency,amplitude, and shape as shown in FIG. 21 (b). In some embodiments, thevoltage is a pulse voltage. The negative substrate bias voltage canattract positive ions to the substrate. The substrate support 408 caninclude a heater 414 that is connected to a temperature controller 421.The temperature controller 421 regulates the temperature of thesubstrate 407. In an embodiment, the temperature controller 420 controlsthe temperature of the substrate 407 to be in a range of about −100 C to(+1000) C.

An embodiment of a magnetically enhanced CVD deposition source magneticfield geometry is shown in FIG. 22 (a). This geometry, on one side,forms a cusp magnetic field in a gap between an anode and a hollowcathode target and, on another side, forms magnetic field lines thatcross a surface of the cathode substantially perpendicular to thecathode surface. Therefore, magnetic field lines from one side terminateon the cathode target surface, and from another side the magnetic fieldlines terminate in the gap on the pole piece that does not has the samepotential as a cathode target, and the pole piece is not a cathodetarget. This magnetic field geometry does not confine secondaryelectrons near the cathode target surface, as in conventional magnetronsputtering sources. Instead, this magnetic field geometry allowssecondary electrons to move from the target surface toward the gapbetween the cathode and the anode.

In the case of chemically enhanced ionized physical vapor deposition(CE-IPVD) when negative voltage pulses are applied to the cathodetarget, plasma is ignited and sustained in a reactive gas atmosphereduring the voltage pulse, the magnetic field lines guide secondaryelectrons emitted by the cathode target surface away from the cathodesurface towards the gap between the hollow cathode and anode. Duringthis movement, the electrons dissociate the feed gas molecules andionize atoms. By the time these electrons come in contact with the polepiece in the gap that concentrates the cusp magnetic field in the gap,the electrons have lost a portion of their initial energy. A portion ofthe secondary electrons will drift back to the hollow cathode targetsurface due to magnetic mirror effect or the presence of negativepotential on the pole piece. If these electrons reach the hollow cathodesurface during the time between voltage pulses, when the hollow cathodetarget voltage is equal to zero, these electrons discharge a positivecharge on top of the cathode surface and significantly reduce oreliminate the probability of arcing on the cathode target surface duringthe CE-IPVD. The amount of electrons returning to the hollow cathodesurface can be controlled by selecting the magnetic field geometry, gaspressure, amplitude, duration, the distance between applied voltagepulses, and duration and value of negative potential on the pole piece.The positive charge on the hollow cathode target surface can be formeddue to the generation of low electrical conductivity films during theCVD process.

A magnetically enhanced CVD source has a hollow cathode target and atleast two rows of magnets 1101 and 1102 as shown in FIG. 22 (a). The tworows of magnets face each other and provide a magnetic field in the samedirection (south-south or north-north) and, therefore, generate cuspmagnetic field geometry 1103 in the gap 1113 between the hollow cathodetarget 1104 and the anode 105 where the anode is positioned on top ofthe hollow cathode target 1104. A pole piece 1106 is disposed betweentwo rows of the magnets 1101, 1102. This pole piece 1106 can be madefrom a magnetic or nonmagnetic material. If the pole piece 1106 is madefrom magnetic material, the pole piece 1106 concentrates the cuspmagnetic field which can increase a magnetic mirror effect for theelectrons drifting from the cathode target surface towards the gap.There is another pole piece 1109 positioned on top of the top row ofmagnets 1101. This pole piece 1109 is made from a magnetic material. Thepole piece 1109 is exposed to plasma through the gap 1110 positioned inthe anode 1105. The pole pieces 1109 and 1106 can be connected to powersupply 1107 or can be grounded or isolated from the ground.

In some embodiments, power supply 1107 is an RF power supply. In someembodiments, pole piece 1106 is grounded through inductor 1127 toeliminate the DC bias. Pole piece 1109 can be connected to a differentpower supply and can have a different potential than pole piece 1106.Pole pieces are isolated from the anode 1106 and magnets 1101 and 1102by isolators 1108. Magnetic field lines from the bottom row of themagnets 1102 penetrate the top surface of the hollow cathode target 1104at a substantially 90 degree angle. Magnetic field lines 1112 from thetop row of the magnets terminate on the magnetic pole piece 1106 and1109. Magnetic field lines 1111 from the bottom row of magnet 102crosses over the magnetic pole pieces 1114, 115, magnet 1116, andcathode target 104. Pole pieces 1114, 1115 are made from magneticmaterial. Magnet 1116 enhances the magnetic field near the cathodetarget surface. The cathode target 1104 is connected to power supply1117. The cathode target 1104 can be also connected to power supply 1118through switch 1119. In some embodiments, power supply 1118 is an RFpower supply and power supply 1117 is a DC power supply. These two powersupplies 1117, 1118 generate an RF DC superimposed discharge. In someembodiments only RF power supply 1118 is connected to the cathode target1104. In this case, a ground 1125 can be connected to the cathode target1104 through inductor 1124 and switch 1126 to eliminate the DC bias. Ifthe cathode target 1104 is inductively grounded, the RF discharge cannotgenerate a constant negative DC voltage bias. In this case, there is nosputtering from the cathode target 1104. In some embodiments, only onepower supply 1117 is connected to the cathode target 1104 and generatesnegative voltage pulses.

Magnetic field 1111 lines that penetrate the hollow cathode surfaceguide the emitted electrons from the hollow cathode target surface 1104to the gap between the anode and the hollow cathode 1104 as shown inFIG. 22 (b) by arrow 1120. By the time the emitted electrons arrive atthe gap, a portion of their initial energy has been lost due todissociation, ionization, and/or elastic and/or non-elastic collisionswith neutral atoms, ions, and/or other electrons. One portion of theelectrons reflect from point “A” due to a magnetic mirror effect andanother portion of the electrons reflect from point “B” due to thepresence of a negative potential on pole piece 1106. The electrons driftback from the gap towards the hollow cathode surface as shown by arrow1121. Another portion of the electrons drift towards the anode gap asshown by arrow 1122. These electrons reflect back from point “C” due tothe magnetic mirror effect, and from point “D” due to a negativeelectric potential on the pole piece as shown by arrow 1123. If polepiece 1109 is hidden under grounded anode 1105, the portion of theelectrons that were not reflected by the magnetic mirror effect areabsorbed by grounded anode 1110. Preferably, a negative voltage on thepole pieces 106 is less than −50 V in order to prevent possiblesputtering from the pole piece. In some embodiments, short negativevoltage pulses with durations in the range of 5-100 μs and amplitudes inthe range of 100-2000 V with a frequency of up to about 100 kHz areapplied to the pole piece 1106. Voltage pulse can be triangle,rectangular, trapezoidal or have any shape. Voltage pulse can benegative, bipolar, or positive. Application of the negative high voltagepulses increase the energy of the electrons reflected from the gap 1113and, therefore, the plasma density.

FIG. 22 (c) shows negative voltage pulses generated by power supply 1107when the cathode target 1104 from the CVD source is connected to the RFpower supply. Pulsed negative voltage increases electron energy in RFdischarge and, therefore, increases plasma density. As a result, in someembodiments, the negative voltage bias generated by RF power supply 1117is reduced during the pulse from UD2 to UD1 as shown in FIG. 22 (d).FIG. 22 (e) shows negative voltage pulses with different amplitude U1-U3generated by power supply 1107. Pulse voltage increases the amount ofelectrons and, therefore, increases the plasma density. A greaternegative pulse voltage amplitude U3 generates greater plasma densityand, therefore, there is a less negative voltage bias UD1 generated bythe RF power supply. As a result, in some embodiments, the dischargevoltage generated by RF power supply 1117 is reduced during the pulse asshown in FIG. 22 (f). The influences of the frequency of the negativevoltage pulses generated by power supply 1107 on discharge voltagegenerated by power supply 1117 or 1118 are shown in FIG. 221 (g, h).FIG. 22 (i) shows negative voltage pulses generated by power supply1107. As a result, in some embodiments, the peak-to-peak voltage Upp1generated by RF power supply 117 connected to the inductively groundedcathode target 1104 is reduced during the pulse Upp2 as shown in FIG. 22(j). Depending on the voltage amplitude, duration, and shape of thevoltage pulses applied to the cathode, the voltage applied to the polepiece 1106, 1109, and gas pressure, the electrons will move back andforth between the cathode target and the gaps.

FIG. 23 (a) shows a cross-sectional view of an embodiment of themagnetically enhanced CVD deposition source 1200. The magneticallyenhanced CVD deposition source 1200 includes a base plate 1201. The baseplate has an electrical ground potential. The cathode assembly includesa water jacket 1202 and a hollow cathode target 1207. The water jacket1202 is electrically isolated from the base plate 1201 with isolators1205 and 1206. Water or another fluid for cooling can move inside thewater jacket 1202 through inlet 1203 and can move outside the waterjacket 1202 through outlet 1204. The hollow cathode target 1207 ispositioned on top of water jacket 1202. The hollow cathode target 1207is electrically connected to a negative terminal of a power supply 1227through a water inlet 1203, transmission line 1230, and switch 1243. Thepower supply 1227 can include a direct current (DC) power supply, apulsed DC power supply that generates unipolar negative voltage pulses,a pulsed DC power supply that generates an asymmetrical bipolar voltagepulses, a pulsed DC power supply that generates symmetrical bipolarvoltage pulses, an RF power supply, and/or a high power pulsed powersupply. Any of these pulsed power supplies can generate differentshapes, frequencies, and amplitudes of the voltage pulses. These powersupplies can work in power control mode, voltage control mode, or incurrent control mode. The water inlet 1204 is electrically connected toa negative terminal of a power supply 1229 through a transmission line1230, matching network 1228, and switch 1242. A power supply 1229 caninclude a radio frequency (RF) power supply, pulsed RF power supply,high frequency (HF) power supply, pulsed HF power supply, or anycombination of these power supplies. The frequency of the applied powercan be in the range of 100 kHz-100 MHz. Power supply 1227 can operatetogether with power supply 1229 or can operate alone without connectingpower supply 1229 to the cathode assembly. Power supply 1229 can operatetogether with power supply 1227 or can operate alone without connectingpower supply 1227 to the cathode assembly. The cathode 1207 can bepowered with any combination of the power supplies mentioned above. Allof the above-mentioned power supplies can operate in current controlmode, voltage control mode, and/or power control mode. Power supply 1227and power supply 1229 can be connected to the same water inlet 1203. Thecathode target 1207 is formed in the shape of a round hollow shape, butcan be formed in other shapes, such as a rectangular hollow shape, disc,and the like. The cathode target 1207 material can be conductive,semi-conductive, and/or non-conductive. The following chemical elements,can be used as a cathode material: B, C, Al, Si, P, S, Ga, Ge, As, Se,In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y,Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au,La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Be, Mg, Ca, Sr,and/or Ba. A combination of these chemical elements or their combinationwith the gases O2, N2, F, Cl, and/or H2 can also be used as a cathodematerial. Power supplies 1227, 1228, and switches 1243, 1242 areconnected to the controller 1280 and computer 1281. Controller 1280and/or computer 1281 control the output voltage values and timing of thepower supplies 1227 and 1229. The power supplies 1227 and 1229 can besynchronized.

The cathode assembly includes a stationary cathode magnetic assembly1222 positioned inside the water jacket 1202. The cathode magneticassembly 1222 in an embodiment includes a disc-shaped magnetic polepiece made from magnetic material, such as iron. The magnetic assembly1222 is mounted on the plate 1223 that is made from non-magneticmaterial. The presence of the magnetic pole piece 1222 provides for aperpendicular direction of the magnetic field lines to the surface ofthe cathode. In an embodiment, the cathode magnetic assembly (stationaryor rotatable) includes a plurality of permanent magnets and magneticpole pieces. The shape of the magnetic assembly 1222 determines theangle between the magnetic field lines and a surface of the cathode. Inan embodiment, the magnetic assembly 1222 is rotatable. In anembodiment, the magnetic assembly 1105 is kidney-shaped. The magneticassembly 1222 can rotate with a speed in the range of 1-500 revolutionsper minute.

A ring-shaped anode 1208 is positioned proximate to the cathode target1207. The anode 1208 and a hollow cathode target 1207 form a circulargap 1226. The electric field lines are perpendicular to the magneticfield lines in the gap. Magnetic field lines 1270 are substantiallyperpendicular to the cathode target surface. In some embodiments, a toppart of the anode 208 has a feed gas chamber and a gas outlet. In someembodiments, a feed gas is fed through the gas pipe to the chamber andis uniformly applied through the holes in the feed gas chamber. In someembodiments, a feed gas is fed through the gap between the hollowcathode target and the anode.

A magnet assembly that generates a cusp magnetic field 1225 has a roundshape and is positioned behind the ring-shaped anode 1208 and hollowcathode target 1207. The magnetic assembly includes magnetic ring-shapedpole pieces 1216, 1214, 1215 and a plurality of permanents magnets 1213,1212. The magnets 1213, 1212 are positioned inside the magnet housing(not shown in FIG. 23 (a)). The magnets 1212, 1213 face each other inthe same direction in order to generate a cusp magnetic field 1225 inthe gap 1226. The value of the magnetic field caused by the permanentmagnets 1212, 1213 is in a range of 100-10000 G. Magnetic pole pieces1216, 1214, 1215, and 1222 with magnets 1213, 1212 generate cuspmagnetic field 1225. The pole piece 1216 is mounted on top of thesupport 1217.

Power supplies 1227, 1229 are connected to the controller 1280.Controller 1280 can be connected to a computer 1281. Controller 1280,1281 control the output voltage signals from the power supplies 1227,1229.

The pole piece 1214 is electrically isolated from the magnet 1212 byisolator 1218. The pole piece 1214 is electrically isolated from themagnet 1213 by isolator 1219. The pole piece 1215 is electricallyisolated from the magnet 1213 by isolator 1220. The pole piece 1215 iselectrically isolated from the anode 1208 by isolator 1221.

The magnetic fields 1225 are shaped to provide electron movement betweenthe cathode target 1207 and pole pieces 1214, 1215. During thismovement, electrons ionize feed gas molecules and/or atoms and sputteredtarget material atoms. Electrons that are generated through ionizationof the feed gas are trapped in the magnetic fields 1225.

The pole pieces 1215, 1214 may have a different design. The portion ofthe pole piece that is exposed to the gap 1226 has a cut 1233 in themiddle as shown in FIG. 23 (b). The pole piece 1232 is made fromnon-magnetic material. The shape and material of the pole piece has aneffect on point of reflections “B” and “A” as shown in FIG. 22 (b).

Pole piece 1214 is connected to voltage control mode power supply 1210through electrode 1211. Electrode 1211 is isolated from the base plate1201 with isolator 1209. In some embodiments, power supply 1210 is an RFpower supply. In some embodiments, pole piece 1219 is grounded throughan inductor.

In an embodiment, the magnets 1213, 1212 are electromagnets as shown inFIG. 23 (c). Rather than using permanent magnets 213, 212 to generatemagnetic field 1225, 1270, coils 1151, 1152 can be used to generate cuspmagnetic field 1225 and magnetic field 1270. Electric current in thecoils 1151, 1152 has a different direction in order to form a cuspmagnetic field. The value of the magnetic field 1225 will depend on theelectrical current value from the power supplies 1155, 1156 and thequantity of wire turns 1153, 1154 in the coils. The power supplies 1155,1156 can release pulsed electrical current or continuous electricalcurrent. Pulsed electrical currents generate a pulsed magnetic field1225, and a continuous electrical current generates a continuousmagnetic field 1225. The magnetic field value 1225 can be in the rangeof 500-10000 G. Power supplies 1156, 1155 can be connected to controller1280 and computer 1281.

FIG. 24 shows voltage pulse shapes that can be generated by power supply1210. The amplitude of negative voltage pulses can be in the range of100 and 2500 V. The pulse duration can be in the range of 1-50 μs.

FIGS. 25 (a, b, c, d) show different voltage pulse shapes, amplitudes,and frequencies that power supply 1227 can provide. Typically, in orderto generate and sustain volume discharge, the power supply 1227 operatesin power control mode or in voltage control mode. FIG. 25 (a) shows acontinuous train of triangular negative voltage pulses. The amplitudecan be in the range of 100-3000 V. FIG. 25 (b) shows a train of negativevoltage pulses that has different voltage amplitudes. The voltage pulseswith amplitude V1 can be optimized to increase the dissociation rate offeed gas molecules, and voltage pulses with amplitude V2 can beoptimized to increase the ionization rate of the target material atomsand particular carbon atoms. The pulse voltage provides energy to theelectrons in the plasma discharge. For example, voltage V1 is optimizedto increase a dissociation rate of gas molecules containing carbon atomssuch as C2H2, CH4, CO, CO2, C3H8, CH3OH, C2H5OH, CH3Cl, and the like.Also, it is important to increase the dissociation rate of H2(H2+e→H2*+e→H+H+e). The high-voltage pulse amplitude V2 provides moreenergy to the electrons. Electrons collide with gas molecules, gasatoms, and target material atoms. Typically, gas atoms need more energyin order to be ionized and molecules need less energy to dissociate.That is, if the voltage amplitude is high then the probability ofionization of atoms will be high. The pulse duration can be in the rangeof 1 microsecond-1 millisecond. FIG. 25 (c) shows a pulse train oftriangular negative voltage pulses. The duration of the train ofnegative voltage pulses can be in the range of 100 microseconds-10milliseconds. The frequency of the train of negative voltage pulses canbe in the range of 100 Hz and 20 KHz. FIG. 25 (d) shows a continuousvoltage that can be in the range of −100 and −2000 V.

FIG. 26 (a) and FIG. 26 (b) show continuous and pulsed RF voltages,respectively, that can be provided by power supply 1228. The RF powercan be in the range of 100 W-10 kW. The RF frequency can be in the rangeof 100 kHz-100 MHz. The frequency of RF pulses can be in the range of100 Hz-100 kHz. FIG. 26 (c) shows voltage on the cathode when powersupply 1227 provides a continuous train of triangle voltage pulses andpower supply 1228 simultaneously provides continuous RF voltage. FIG.26(d) shows voltage on the cathode when power supply 1227 provides apulse train of triangular voltage pulses and power supply 1228simultaneously provides pulse RF voltage. Power supply 1227 can generatea continuous train of rectangular negative voltage pulses as shown inFIG. 27 (a). Power supply 1227 can generate a pulse train of rectangularnegative voltage pulses as shown in FIG. 27 (b). FIG. 27 (c) showsdifferent voltage pulse shapes in one pulse train. FIG. 27 (d) shows atrain of asymmetric bi-polar voltage pulses when the negative pulsevoltage has triangular shape. FIG. 27 (e) shows continuous and pulsed RFvoltages that can be provided by power supply 1228 or 1227 to theinductively grounded cathode target 1207.

The magnetically enhanced CVD deposition source 1200 can be mountedinside the vacuum chamber 1270 in order to construct the magneticallyenhanced HDP-PVD deposition apparatus 1291 as shown in FIG. 28. Thevacuum chamber 1270 contains feed gas and plasma. The vacuum chamber1270 is coupled to ground 1288. The vacuum chamber 1270 is positioned influid communication with a vacuum pump 1287, which can evacuate the feedgas from the vacuum chamber 1270. Typical baseline pressure in thevacuum chamber 1270 is in a range of 10⁻⁵-10⁻⁹ Torr.

A feed gas is introduced into the vacuum chamber 1270 through a gasinlet 1289 from feed gas sources. A mass flow controller 1280 controlsgas flow to the vacuum chamber 1270. In an embodiment, vacuum chamber1270 has many gas inlets and mass flow controllers. The gas flow can bein a range of 1-100000 SCCM depending on plasma operating conditions,pumping speed of the vacuum pump 1287, process conditions, and the like.In some embodiments, the feed gas is introduced through the gap 1226from the magnetically enhanced CVD source. Typical gas pressure in thevacuum chamber 1201 during a CVD process is in a range of 0.1 mTorr-50Torr. In an embodiment, a plurality of gas inlets and a plurality ofmass flow controllers sustain a desired gas pressure during the CVDprocess. The plurality of gas inlets and plurality of mass flowcontrollers may be positioned in the vacuum chamber 1270 at differentlocations. The feed gas can be a noble gas, such as Ar, Ne, Kr, Xe; areactive gas, such as N2, O2; any other gas that is suitable for CVDprocesses. For depositing DLC or diamond films, the feed gas containsatoms of carbon. For example, the cathode target material is carbon. Thefeed gas can be C2H2, or CH4 or any other gases/vapors contains carbonatoms, such as CO, CO2, C3H8, CH3OH, C2H5OH, and/or CH3Cl. Feed gas canalso be a mixture of different of gases. In some embodiments, thecathode target material is not a carbon. The CVD source is connected topower supply 2127 through water inlet 1203, and power supply 1229 isconnected to water outlet 1204. In some embodiments, only power supply1227 is connected to the CVD source. In some embodiments, only powersupply 1228 is connected to the CVD source.

The magnetically enhanced CVD apparatus 1291 includes a substrate holder1292 that holds a substrate 1283 or other work piece for plasmaprocessing. The substrate support 1284 is electrically connected to biasvoltage power supply 1290 through the connector 1285. The bias voltagepower supply 1290 can include a radio frequency (RF) power supply,alternating current (AC) power supply, very high frequency (VHF) powersupply, and/or direct current (DC) power supply. The bias power supply1290 can operate in continuous mode or in pulse mode. Pulse substratebias voltage can be synchronized with pulse voltage applied to thecathode target. The bias power supply 1290 can be a combination ofdifferent power supplies that can provide different frequencies. Thenegative bias voltage on the substrate can be in a range of −1 and −2000V. The negative substrate bias voltage can attract positive ions to thesubstrate. In some embodiments, substrate holder 1285 is inductivelygrounded to eliminate the DC bias and connected to RF power supply.During the operation, there is no negative constant bias. There are onlyRF voltage oscillations on the surface of the substrate that promotedissociation of the carbon containing gas. The substrate support 1284can include a heater 1284 connected to a temperature controller 1286(exact connection is not shown). The temperature controller 1284regulates the temperature of the substrate 1283. In an embodiment, thetemperature controller 1286 controls the temperature of the substrate1283 to be in a range of −20 C to +1500 C.

An additional magnet assembly between the CVD source and substrate 1283can be positioned inside the vacuum chamber 1270 or outside the vacuumchamber 1270 in order to increase plasma density near the substrate and,therefore, increase the dissociation rate of the gas molecules andimprove film uniformity on the substrate.

The magnetically enhanced CVD source can be positioned in the vacuumchamber 301 as shown in FIG. 29. Two rectangular magnetically enhancedCVD sources 1304, 1305 are positioned inside the vacuum chamber 1301.Vacuum pump 1302 can provide base pressure up to 10-8 Torr. Two heaters1308, 1309 control temperature of the sample 1307. Two rectangularmagnetically enhanced CVD sources 1304, 1305 are connected to the powersupply 1312, 1315. The magnetically enhanced CVD source 1305 isconnected to RF power supply 1318 through the switch 1319 and isconnected to ground through inductor 321 and switch 1320. The pole piece1214 from the magnetically enhanced CVD source 3105 is connected topower supply 324 through switch 1325. The pole piece 1214 from the CVDsource 1304 is connected to power supply 1323 through switch 1322.Substrate holder 1306 is connected to bias power supply 1313. Bias powersupply 1313, power supplies 1312, 1315, and switches 1316, 1310, 1318are connected with controller 1314. Power supplies 1316, 1312 canprovide any voltage pulses in any order as shown in FIGS. 25 (a, b, c,d), FIGS. 26 (a, b, c, d), and FIGS. 27 (a, b, c, d, e). Bias powersupply 1313 can be RF power supply with frequency is in the range of 500kHz and 30 MHz. Bias power supply 1313 can be DC power supply or pulseDC power supply.

The substrate support1 1306 can provide for rotation of the substrate1307. The substrate support 1306 can have different parts that rotate atdifferent speeds. The substrate support 1306 can hold one or moresubstrates 1130 or work pieces.

In an embodiment, the substrate 1307 is a part of automobile engine andthe coating is a hydrogenated diamond-like coating (DLC). The DLCcoating reduces the coefficient of friction of moving parts in theautomobile engine. The thickness of the DLC coating is in a range of0.1-50 microns depending on the particular engine part. The parts thatcan be coated include the turbocharger, valve, piston, piston ring,piston pin, heat exchanger, connecting rod, crank end bearing, bearing,ball from any bearing, after cooler, intercooler, rocker arm, injector,valve guide, push rod, camshaft, fuel injection pump, oil pump, or anyother part associated with the automobile engine.

The method of CVD depositing a film on the substrate includes thefollowing steps. A first step is cleaning the surface of the substrateby a sputter etch process with a noble gas. In this step, the feed gaswill be a noble gas, such as Ar. The gas pressure can be in the range of1-20 mTorr. The substrate bias can be between −300 V and −1000 V.Magnetically enhanced CVD source 1305 operates in sputter etch mode. Inthis mode, only RF power supply 1318 is connected to the cathode targetfrom magnetically enhanced CVD source 1305. The cathode target of theCVD source 1305 is inductively grounded in order to prevent sputteringfrom the cathode target. Power supply 1324 generates voltage pulses withamplitude, duration, and frequency to provide optimum energy in therange of 150 eV to the electrons to generate Ar ions. In an embodiment,power supply 1313 is RF power supply. In an embodiment, power supply1324 is not connected with pole piece 1214. In this case, the RF powersupply 1315 generates enough power to generate significant amount of Arions. In some embodiments, power supply 1324 is an RF power supply. Insome embodiments, pole piece 1214 is grounded through an inductor.

A second step is RIE (reactive ion etch cleaning) cleaning the surfaceof the substrate by a reactive gas, such as O2, H2. In some embodiments,the cleaning is made using H2. In this step, the feed gas is a reactivegas. The gas pressure can be in the range of 1 mTorr-100 mTorr. Thesubstrate bias can be between −100 V and −1000 V. Magnetically enhancedCVD sources 1305 operate in RIE mode. In this mode, only RF powersupply1 1318 is connected to CVD source 1305. The cathode target fromthe magnetically enhanced CVD source 1305 is inductively grounded. Powersupply 1312 generates RF discharge. Power supply 1324 generates voltagepulses with amplitude, duration, and frequency to provide optimum energyin the range of 150 eV to the electrons to generate reactive gas ions.In an embodiment, the bias power supply 1313 is an RF power supply. Thevoltage oscillation duration can be in the range of 3-50 μs. Forexample, the amplitude of the voltage oscillations in order to increasethe ionization rate of gas atoms can be in the range of 300 to 1000 V.The voltage oscillation duration can be in the range of 3-8microseconds. In an embodiment, only the RF power supply 1312 operatesand the RF power level is optimized by adjusting output power to providean optimum amount of energy for the electrons in order to provide amaximum probability to generate atomic hydrogen when electrons collidewith hydrogen molecules. In an embodiment, power supplies 1312, 1313operate simultaneously to generate atomic hydrogen. The third step isthe CVD film deposition. In this case, any gas that includes carbonatoms, such as acetylene, methane, and the like can be used. Thesubstrate temperature is in the range of 400 C.

In an embodiment, the workpiece is a part of a jet engine, and thecoating can be hydrogenated DLC, or hydrogenated metal-doped DLC orAlpha Alumina.

In an embodiment, the magnetically enhanced CVD source can be used toform hard DLC coating on the tip of the razor blade, as shown in FIG.30. A blade 1403 and magnetically enhanced CVD source 1401 arepositioned inside the vacuum chamber 1406. A feed gas, such as Ar, C2H2,CH4, or any other gas that contains carbon atoms is used for the CVDprocess. Power supplies 1402 and/or 1407 release negative voltage pulseson the cathode target 1207 from the magnetically enhanced CVD source.Power supply 1402 and/or 1407 control voltage amplitude, pulse duration,and frequency. The parameters of the voltage pulses are shown in FIGS.25 (a, b, c, d), FIGS. 26 (a, b, c, d), FIGS. 27 (a, b, c, d). Powersupply 1404 provides negative bias voltage on the blade in the range of−20 V to −200V. Power supply 1408 is connected to pole piece 1214. Powersupply provides voltage pulses in order to increase electron energy andincrease ionization degree of carbon atoms. The voltage pulse shapes andfrequency are optimized in order to get DLC film with a hardness in therange of 20-50 GPa. Typical voltage pulse amplitude will be in the rangeof 1000-2000 V in order to obtain film hardness in the range of 30 GPa.In some embodiments, cathode target 1207 is inductively grounded. Insome embodiments, pole piece 1214 is inductively grounded.

The magnetically enhanced CVD source can be used for many differentapplications. The application of diamond and DLC coatings deposited withthe CVD source includes but is not limited to smart phones, tablets,flat panel displays, hard drives, read/write heads, hair removal,optical filters, watches, valves, facets, thin film batteries, disks,microelectronics, hard masks, transistors, and/or manufacturing mono andpolycrystalline substrates.

The magnetically enhanced CVD source can be used for sputteringapplications and can be used for chemically enhanced ionized vapordeposition. The magnetically enhanced CVD source can be configured as anArc source.

A magnetically enhanced HDP-CVD plasma source includes a hollow cathodetarget and an anode. The anode and cathode form a gap. A cathode targetmagnet assembly forms magnetic field lines that are substantiallyperpendicular to a cathode target surface. The gap magnet assembly formsa cusp magnetic field in the gap that is coupled with the cathode targetmagnetic field. The magnetic field lines cross a pole piece and areshielded by a shield from the plasma positioned between the poles andthe gap. This pole piece can be connected with a voltage power supply.The shield piece can have a negative, positive, or floating electricpotential. The plasma source can be configured to generate volumedischarge. The gap size prohibits generation of plasma discharge in thegap. By controlling the duration, value and a sign of the electricpotential on the pole piece, the plasma ionization can be controlled.The magnetically enhanced HDP-CVD source can also be used for chemicallyenhanced ionized physical vapor deposition (CE-IPVD), plasma enhancedtomic layer deposition (PE-ALD) and reactive ion etch (RIE) and plasmathrusters or pulsed plasma thrusters (PPT). Gas flows through the gapbetween hollow cathode and anode. The cathode target is inductivelygrounded, and the substrate is periodically inductively grounded.

An embodiment of a magnetically enhanced CVD deposition source magneticfield geometry is shown in FIGS. 31-32, and 36. This geometry, on oneside, forms a cusp magnetic field in a gap between an anode and a hollowcathode target and, on another side, forms magnetic field lines thatcross a surface of the cathode substantially perpendicular to thecathode surface. Therefore, magnetic field lines from one side terminateon the cathode target surface, and from another side the magnetic fieldlines terminate in the gap on the shield 1131 that does not have thesame potential as a cathode target, and the shield piece 1131 isshielding the pole piece 1106, 1109 from the plasma. This magnetic fieldgeometry does not confine secondary electrons near the cathode targetsurface, as in conventional magnetron sputtering sources. Rather, thismagnetic field geometry allows secondary electrons to move from thetarget surface toward the gap between the cathode and the anode.

A magnetically enhanced CVD source includes a hollow cathode target andat least two rows of magnets 1101, 1102, as shown in FIGS. 31, 32, 36.The two rows of magnets face each other and provide a magnetic field inthe same direction (i.e., south-south or north-north) and, therefore,generate cusp magnetic field geometry 1103 in the gap 1113 between thehollow cathode target 104 and the anode 11105 where the anode ispositioned on top of the hollow cathode target 1104. A pole piece 1106is disposed between two rows of the magnets 1101, 1102. This pole piece1106 can be made from magnetic or nonmagnetic material. If the polepiece 1106 is made from magnetic material, the pole piece 1106concentrates the cusp magnetic field, which can increase a magneticmirror effect for the electrons drifting from the cathode target surfacetowards the gap. There is another pole piece 1109 positioned on top ofthe top row of magnets 1101. This pole piece 1109 is made from magneticmaterial. The pole piece 1109 is not exposed to plasma through the gap1110 positioned in the anode 1105 because shield 1131 is protecting allthe poles. The shield can be connected to power supply 1107 or can begrounded or isolated from ground.

In some embodiments, power supply 1107 is an RF power supply. In someembodiments, shield piece 1131 is grounded through inductor 1127 toeliminate the DC bias. Magnetic field lines from the bottom row of themagnets 1102 penetrate the top surface of the hollow cathode target 1104at a substantially 90-degree angle. Magnetic field lines 1112 from thetop row of the magnets terminate on the magnetic shield piece 1131.Magnetic field lines 1111 from the bottom row of magnet 1102 crossesover the magnetic pole pieces 1114, 1115, magnet 1116, and cathodetarget 1104. Pole pieces 114, 115 are made from magnetic material.Magnet 116 enhances the magnetic field near the cathode target surface.The cathode target 104 is connected to multiple RF power supplies 118with matching network 1128 and optional common exciter 1140. The cathodetarget 1104 can be also connected to a regulated high power unipolarvoltage pulse power supply 1130 and pulse forming network (PFN) 1129 toproduce a resonance asymmetric pulse AC discharge superimposed over RFdischarge. In some embodiments only two RF power supplies 1118 areconnected to the cathode target 1104 as seen in FIG. 32. The powersupplies 1118 can run in pulsed mode or continuous mode. The powersupplies 1118 can be at the same frequency or different frequencies.Each frequency is chosen carefully to optimize the ionization processfor each element. For example, a carbon atom has a different ionizationpotential than a metal atom. The same applies to the ionization of gasmolecules as well.

In some embodiments, only a regulated high-power unipolar voltage pulsepower supply 1130 and pulse forming network (PFN) 1129 are used toproduce a resonance asymmetric pulse AC discharge when connected to thecathode target 1104 as shown in FIG. 36. In some embodiments, anaccelerating grid 1132 is positioned parallel to the surface of thehollow cathode target, and a power supply 1133 is connected to theaccelerating grid providing voltage for ion acceleration from themagnetically enhanced chemical vapor deposition (CVD) plasma source. Insome embodiments, the power supply 1133 can be operated in continuous orpulsed mode. In some embodiments, the accelerating grid can be grounded.In some embodiments, the shield 1131 can be grounded. In someembodiments, a ground 1125 can be connected to the cathode target 1104through inductor 1124 and switch 1126. If the cathode target 1104 isinductively grounded, the RF discharge cannot generate a constantnegative voltage bias. In this case, there is no sputtering from thecathode target 1104. The switch 1126 can be synchronized in pulse modeto turn on only when at least one RF generator is pulsing and off whenit is not. The switching frequency 1126 can be synchronized with thepulsing of the power supply 1130, 1129.

An embodiment of a magnetically enhanced CVD deposition source magneticfield geometry is shown in FIGS. 31, 32, 36. This geometry, on one side,forms a cusp magnetic field in a gap between an anode and a hollowcathode target and, on another side, forms magnetic field lines thatcross a surface of the cathode substantially perpendicular to thecathode surface. Therefore, magnetic field lines from one side terminateon the cathode target surface, and from another side, the magnetic fieldlines terminate in the gap on the shield 1131 that does not have thesame potential as a cathode target, and the shield piece 1131 shieldsthe pole piece 1106, 1109 from the plasma. This magnetic field geometrydoes not confine secondary electrons near the cathode target surface, asin conventional magnetron sputtering sources. Rather, this magneticfield geometry allows secondary electrons to move from the targetsurface toward the gap between the cathode and the anode.

A magnetically enhanced CVD source has a hollow cathode target and atleast two rows of magnets 1101 and 1102 as shown in FIGS. 31, 32, and36. The two rows of magnets face each other and provide a magnetic fieldin the same direction (i.e., south-south or north-north) and, therefore,generate cusp magnetic field geometry 1103 in the gap 1113 between thehollow cathode target 1104 and the anode 1105 where the anode ispositioned on top of the hollow cathode target 1104. A pole piece 1106is disposed between two rows of the magnets 1101, 1102. This pole piece1106 can be made from magnetic or nonmagnetic material. If the polepiece 1106 is made from magnetic material, the pole piece 1106concentrates the cusp magnetic field, which can increase a magneticmirror effect for the electrons drifting from the cathode target surfacetowards the gap. There is another pole piece 1109 positioned on top ofthe top row of magnets 1101. This pole piece 1109 is made from magneticmaterial. The pole piece 1109 is not exposed to plasma through the gap1110 positioned in the anode 1105 because shield 1131 protects all thepoles pieces 1106, 1109 and magnets 1101, 1102. The shield can beconnected to power supply 107 or can be grounded or isolated fromground.

In some embodiments, power supply 1107 is an RF power supply. In someembodiments, shield piece 1131 is grounded through inductor 1127 toeliminate the DC bias. Magnetic field lines from the bottom row of themagnets 1102 penetrate the top surface of the hollow cathode target 1104at a substantially 90-degree angle. Magnetic field lines 1112 from thetop row of the magnets terminate on the magnetic shield piece 1131.Magnetic field lines 1111 from the bottom row of magnet 1102 crossesover the magnetic pole pieces 1114, 1115, ring magnet 1116, and cathodetarget 1104. Another magnetic assembly 1134, 1135 is positionedconcentrically to the ring magnet 1116 in a magnetron configuration onthe cathode target 1104. Pole pieces 1114, 1115 are made from magneticmaterial. Magnet 1116 enhances the magnetic field near the cathodetarget surface. The cathode target 1104 is connected to multiple RFpower supplies 1118 with matching network 1128 and optional commonexciter 1140. The cathode target 1104 can be also connected to aregulated high-power unipolar voltage pulse power supply 1130 and pulseforming network (PFN) 1129 to produce a resonance asymmetric pulse ACdischarge superimposed over RF discharge as shown in FIG. 34. In someembodiments, only two RF power supplies 1118 are connected to thecathode target 1104 as shown in FIG. 33. The power supplies 1118 can runin pulsed mode or continuous mode. The power supplies 1118 can be set tothe same frequency or different frequencies. Each frequency is chosencarefully to optimize the ionization process for each element. Forexample, a carbon atom has a different ionization potential than a metalatom. The same applies to the ionization of gas molecules as well. Insome embodiments, a regulated high power unipolar voltage pulse powersupply 130 and pulse forming network (PFN) 1129 are used to produce aresonance asymmetric pulse AC discharge when connected to the cathodetarget 1104 as shown in FIG. 35. In some embodiments, an acceleratinggrid 1132 positioned parallel to the surface of the hollow cathodetarget and a power supply 1133 are connected to the accelerating gridproviding voltage for ion acceleration from the magnetically enhancedchemical vapor deposition (CVD) plasma source as shown in FIGS. 31, 32,36. In some embodiments, the voltage power supply 1133 can be operatedin continuous or pulsed mode. In some embodiments, the accelerating gridcan be grounded. In some embodiments, the shield 1131 can be grounded.In some embodiments, a ground 1125 can be connected to the cathodetarget 1104 through inductor 1124 and switch 1126. If the cathode target1104 is inductively grounded, the RF discharge cannot generate aconstant negative voltage bias. In this case, there is no sputteringfrom the cathode target 1104. The switch 1126 can be synchronized inpulse mode to turn on only when at least one RF generator is pulsing andoff when it is not. The switching frequency 1126 can be synchronizedwith the pulsing of the power supply 1130, 1129.

An embodiment of a magnetically enhanced CVD deposition source withhybrid magnetic field geometry is shown in FIGS. 33, 34, 35. Thisgeometry, on one side, forms a cusp magnetic field in a gap between ananode and a hollow cathode target and, on another side, forms magneticfield lines that cross a surface of the cathode substantiallyperpendicular to the cathode surface. Therefore, magnetic field linesfrom one side terminate on the cathode target surface, and from anotherside, the magnetic field lines terminate in the gap on the shield 1131that does not have the same potential as a cathode target, and theshield piece 1131 shields the pole piece 1106, 1109 from the plasma.Adding a magnetic assembly 1134, 1135 forms a magnetron configurationconcentric to pole piece 1115 and magnet 1116 that forms a closedmagnetic field on the surface of the cathode target 1104. Some of themagnetic field on magnet 1134 couples to pole piece 1115 and some of themagnetic field on magnet 1135 couples to the cusp field on pole piece1106. This hybrid magnetic field geometry does not confine secondaryelectrons near the cathode target surface, as in conventional magnetronsputtering sources, through the gap allowing secondary electrons to movefrom the target surface toward the gap between the cathode and the anodeto break down the gas and improve the ionization of the sputteredmaterial from the inner concentric magnetic field, which forms amagnetron configuration on the surface of the target 1104 to causesputtering from the cathode target 1104 forming a layer of thesubstrate.

A magnetically enhanced CVD source includes a hollow cathode target andat least two rows of magnets 1101, 1102 as shown in FIGS. 34, 35, 36.The two rows of magnets face each other and provide a magnetic field inthe same direction (i.e., south-south or north-north) and, therefore,generate cusp magnetic field geometry 1103 in the gap 1113 between thehollow cathode target 1104 and the anode 1105, wherein the anode ispositioned on top of the hollow cathode target 1104. A pole piece 1106is disposed between two rows of the magnets 1101, 1102. This pole piece1106 can be made from magnetic or nonmagnetic material. If the polepiece 1106 is made from magnetic material, the pole piece 1106concentrates the cusp magnetic field, which can increase a magneticmirror effect for the electrons drifting from the cathode target surfacetowards the gap. There is another pole piece 1109 positioned on top ofthe top row of magnets 1101. This pole piece 1109 is made from magneticmaterial. The pole piece 1109 is not exposed to plasma through the gap1110 positioned in the anode 1105 because shield 1131 protects the polespieces 1106, 1109 and magnets 1101, 1102. The shield is connected topower supply 107, grounded, or isolated from ground.

In some embodiments, power supply 1107 is an RF power supply. In someembodiments, shield piece 1131 is grounded through inductor 1127 toeliminate the DC bias. Magnetic field lines from the bottom row of themagnets 1102 penetrate the top surface of the hollow cathode target 1104at a substantially 90-degree angle. Magnetic field lines 1112 from thetop row of the magnets terminate on the magnetic shield piece 1131.Magnetic field lines 1111 from the bottom row of magnet 1102 cross overthe magnetic pole pieces 1114, 1115, ring magnet 1116, and cathodetarget 1104. Another magnetic assembly 1134, 1135 is positionedconcentrically to the ring magnet 1116 in a magnetron configuration onthe cathode target 1104. Some of the magnetic field on magnet 1134couples to pole piece 1115 and some of the magnetic field on magnet 1135couples to the cusp field on pole piece 1106. In some embodiments,magnet 1134 includes a one-ring magnet, wherein multiple shaped magnetsform a ring magnet, or an electromagnet ring. In some embodiments,magnet 1135 includes a single cylindrical magnet, wherein multipleshaped ring magnets form a cylinder or an electromagnet. The concentricmagnetic assembly can be stationary or rotating. Pole pieces 1114, 1115are made from magnetic material. Magnet 1116 enhances the magnetic fieldnear the cathode target surface. The cathode target 1104 is connected tomultiple RF power supplies 1118 with matching network 1128 and optionalcommon exciter 1140. The cathode target 1104 can be also connected to aregulated high-power unipolar voltage pulse power supply 1130 and pulseforming network (PFN) 1129 to produce a resonance asymmetric pulse ACdischarge superimposed over RF discharge as shown in FIG. 34. In someembodiments, only two RF power supplies 1118 are connected to thecathode target 1104, as shown in FIG. 33. The power supplies 1118 canrun in pulsed mode or continuous mode. The power supplies 1118 can beset to the same frequency or different frequencies. Each frequency isselected to optimize the ionization process for each element. Forexample, a carbon atom has a different ionization potential than a metalatom. The same applies to the ionization of gas molecules as well. Insome embodiments, a regulated high-power unipolar voltage pulse powersupply 130 and pulse forming network (PFN) 1129 are used to produce aresonance asymmetric pulse AC discharge when connected to the cathodetarget 1104 as shown in FIG. 35. In some embodiments, an acceleratinggrid 1132 positioned parallel to the surface of the hollow cathodetarget and a power supply 1133 are connected to the accelerating gridproviding voltage for ion acceleration from the magnetically enhancedchemical vapor deposition (CVD) plasma source, as shown in FIGS. 33, 34,35. In some embodiments, the voltage power supply 1133 can be operatedin continuous or pulsed mode. In some embodiments, the accelerating gridcan be grounded. In some embodiments, the shield 1131 can be grounded.In some embodiments, a ground 1125 can be connected to the cathodetarget 1104 through inductor 1124 and switch 1126. If the cathode target1104 is inductively grounded, the RF discharge cannot generate aconstant negative voltage bias. In this case, there is no sputteringfrom the cathode target 1104. The switch 1126 can be synchronized inpulse mode to turn on only when at least one RF generator is pulsing andoff when at least one RF generator is not pulsing. The switchingfrequency 1126 can be synchronized with the pulsing of the power supply1130, 1129.

FIG. 37 shows continuous and pulsed RF voltages with varying pulsedpower, respectively, that can be provided by two power supplies 1118.The RF power can be in the range of 100 W-50 kW. The RF frequency can bein the range of 100 kHz-100 MHz. The frequency of RF pulses can be inthe range of 100 Hz-100 kHz.

FIG. 38 shows continuous and pulsed RF voltages with pulsed power,respectively, that can be provided by two power supplies 1118. The RFpower can be in the range of 100 W-50 kW. The RF frequency can be in therange of 100 kHz-100 MHz. The frequency of RF pulses can be in the rangeof 100 Hz-100 kHz.

FIG. 39 shows continuous and pulsed RF voltages with varying pulsedpower, respectively, that can be provided by two power supplies 1118superimposed with resonance asymmetric varying AC pulse from ahigh-power pulse generator feeding a PFN connected to the magneticallyenhanced source. The RF power can be in the range of 100 W-50 kW. The RFfrequency can be in the range of 100 kHz-100 MHz. The frequency of RFpulses can be in the range of 100 Hz-100 kHz. The resonance asymmetricvarying AC pulse is generated by a high-power regulated unipolarnegative voltage pulse generator 1130 feeding a PFN 1129 with aplurality of inductors and capacitors tuned to generate a resonanceeffect on the magnetically enhanced source as shown in FIGS. 31, 34. Theresonance asymmetric varying AC pulse can be synchronized with thepulsed RF generator 1118 or not. The resonance asymmetric varying ACpulse can be in the range of 0.1-20 KW/cm2, the frequency can be in therange of 1 Hz-100 KHz, the negative voltage can be in the range of −50to −5000V and the positive voltage can be in the range of 10 to 5000V.The pulse width of the unipolar voltage pulse feeding the PFN can be inthe range of 0.1-1000 microseconds. The arc suppression can be triggeredby either generators 1118 or 130 as the master trigger and the othersupply can be in slave mode until the arc is cleared.

FIG. 40 shows pulsed RF voltages with varying pulsed power on amagnetically enhanced device as shown in FIGS. 32, 33, that can beprovided by one power supply 118. The RF power can be in the range of100 W-50 kW. The RF frequency can be in the range of 100 kHz-100 MHz.The frequency of RF pulses can be in the range of 100 Hz-100 kHz. Eithersource can have the cathode target 104 connected to an inductor 1124 toground 1125 through a switch. When connected to ground, the RF generator1118 cannot generate a DC voltage bias on the target.

FIG. 41 shows pulsed RF voltages with varying pulsed power on amagnetically enhanced device as shown in FIGS. 32, 33 that can beprovided by multiple power supplies 1118. The RF power can be in therange of 100 W-50 kW. The RF frequency can be in the range of 100kHz-100 MHz. The frequency of RF pulses can be in the range of 100Hz-100 kHz. Either source can have the cathode target 1104 connected toan inductor 1124 to ground 1125 through a switch. When connected toground, the RF generator 1118 cannot generate a DC voltage bias on thetarget.

FIG. 42 shows continuous and pulsed RF voltages with varying pulsedpower, respectively, that can be provided by two power supplies 1118superimposed with resonance asymmetric varying AC pulses from ahigh-power pulse generator feeding a PFN connected to the magneticallyenhanced source. The RF power can be in the range of 100 W-50 kW. The RFfrequency can be in the range of 100 kHz-100 MHz. The frequency of RFpulses can be in the range of 100 Hz-100 kHz. The resonance asymmetricAC pulse is generated by a high-power regulated unipolar negativevoltage pulse generator 1130 feeding a PFN 1129 with a plurality ofinductors and capacitors tuned to generate a resonance effect on themagnetically enhanced source as shown in FIGS. 32, 34. The resonanceasymmetric AC pulse can be synchronized with the pulsed RF generator1118 or not. The resonance asymmetric varying AC pulse can be in therange of 0.1-20 KW/cm2, the frequency can be in the range of 1 Hz-100KHz, the negative voltage can be in the range of −50 to −5000V, and thepositive voltage can be in the range of 10-5000V. The pulse width of theunipolar voltage pulse feeding the PFN can be in the range of 0.1-1000microseconds. The arc suppression can be triggered by either generators1118, 1130 as the master trigger, and the other supply will be in slavemode until the arc is cleared. In some embodiments, the superimposedresonance asymmetric AC pulse can be a resonance symmetric AC pulse.

FIG. 43 shows continuous RF voltages with varying power on amagnetically enhanced device as shown in FIGS. 32, 33, respectively,which can be provided by two power supplies 118. The RF power can be inthe range of 100 W-50 kW. The RF frequency can be in the range of 100kHz-100 MHz. The frequency of RF pulses can be in the range of 100Hz-100 kHz. The generators can run at different frequencies from eachother. In some embodiments, the common exciter (CEX) 1140 is used toprevent unwanted beat frequencies. Two RF generators can be phase-lockedtogether so that the generators run at the same frequency and with afixed phase relationship between their outputs. This locking ensuresrepeatable RF characteristics within the plasma.

FIG. 44 shows continuous and pulsed resonance asymmetric AC pulsesgenerated by a high-power regulated unipolar negative voltage pulsegenerator 1130 feeding a PFN 1129 with a plurality of inductors andcapacitors tuned to generate a resonance effect on the magneticallyenhanced source as shown in FIGS. 35, 36. The resonance asymmetricvarying AC pulse can be in the range of 0.1-20 KW/cm2, the frequency isin the range of 1 Hz-100 KHz, the negative voltage is in the range of−50 to −5000V, and the positive voltage is in the range of 10 to 5000V.The pulse width of the unipolar voltage pulse feeding the PFN can be inthe range of 0.1-1000 microseconds. In some embodiments, thesuperimposed resonance asymmetric AC pulse can be resonance symmetric ACpulse.

FIG. 45 show continuous and pulsed resonance asymmetric AC pulses withmultiple voltage peaks generated by a high-power regulated unipolarnegative voltage pulse generator 1130 feeding a PFN 1129 with aplurality of inductors and capacitors tuned to generate a resonanceeffect on the magnetically enhanced source as shown in FIGS. 35, 36. Theresonance asymmetric varying AC pulse can be in the range of 0.1-20KW/cm2, the frequency in the range of 1 Hz-100 KHz, the negative voltagecan be in the range of −50 to −5000V, and the positive voltage can be inthe range of 10 to 5000V. The pulse width of the unipolar voltage pulsefeeding the PFN can be in the range of 0.1-1000 microseconds. In someembodiments, the superimposed resonance asymmetric AC pulse can beresonance symmetric AC pulses.

FIG. 46 show continuous and pulsed RF voltages with varying pulsedpower, respectively, that can be provided by two power supplies 1118superimposed with resonance asymmetric varying AC pulses from ahigh-power pulse generator feeding a PFN connected to the magneticallyenhanced source. The RF power can be in the range of 100 W-50 kW. The RFfrequency can be in the range of 100 kHz-100 MHz. The frequency of RFpulses can be in the range of 100 Hz-100 kHz. The resonance asymmetricAC pulse is being generated by a high power regulated unipolar negativevoltage pulse generator 1130 feeding a PFN 1129 with a plurality ofinductors and capacitors tuned to generate a resonance effect on themagnetically enhanced source as shown in FIGS. 31, 34 be have a singlevoltage and multiple voltage peaks on the negative part of the AC cycle.The resonance asymmetric AC pulse can be synchronized with the pulsed RFgenerator 1118 or not. The resonance asymmetric varying AC pulse can bein the range of 0.1-20 KW/cm2, the frequency in the range of 1 Hz-100KHz, the negative voltage range can be in the range of 50 to 5000V, andthe positive voltage can be in the range of 10 to 5000V. The pulse widthof the unipolar voltage pulse feeding the PFN can be in the range of0.1-1000 microseconds. The arc suppression can be triggered by eithergenerators 1118, 1130 as the master trigger and the other supply will bein slave mode until the arc is cleared. In some embodiments, thesuperimposed resonance asymmetric AC pulse can be resonance symmetric ACpulse.

FIG. 47 (a) shows input unipolar negative pulses applied to a PFN 1129connected to the magnetically enhanced source as shown in FIGS. 35, 36and the output high-power negative DC pulse of the PFN 1129 on themagnetically enhanced source as shown in FIGS. 35, 36. The high-powernegative DC pulse is generated by a multiple high-power regulatedunipolar negative voltage pulse generator 130 feeding a PFN 1129 with aplurality of inductors and capacitors tuned to generate a DC voltageoutput. The DC pulse can be in the range of 0.1-20 KW/cm2, the frequencyin the range of 1 Hz-100 KHz, and the negative voltage in the range of−50 to −5000V. The pulse width of the unipolar voltage pulse feeding thePFN can be in the range of 0.1-1000 microseconds and the output pulse ofthe PFN 1129 can be in the range 50 to 50000 microseconds.

FIG. 47 (b) shows input unipolar negative pulses to a PFN or PCN 1129connected to the magnetically enhanced source as shown in FIGS. 35, 36and output high-power oscillatory negative DC pulses of the PFN or PCN1129 on the magnetically enhanced source as shown in FIGS. 35, 36. Thehigh-power oscillatory negative DC pulse is generated by a multiplehigh-power regulated unipolar negative voltage pulse generator 1130feeding a PFN or PCN 1129 with a plurality of inductors and capacitorstuned to generate a DC voltage output. The oscillatory DC pulse can bein the range of 0.1-20 KW/cm2, the frequency in the range of 1 Hz-100KHz, and the negative voltage in the range of −50 to 5000V. The pulsewidth of the unipolar voltage pulse feeding the PFN can be in the rangeof 0.1-1000 microseconds and the output pulse of the PFN or PCN can bein the range 50-50000 microseconds. The oscillation on the oscillatoryDC pulse can be +/−99% of the input unipolar negative pulse values.

FIG. 47 (c) shows input unipolar negative pulses to a PFN or PCN 1129connected to the magnetically enhanced source as shown in FIGS. 35, 36and the output pulsed resonance asymmetric AC pulse generated by ahigh-power regulated unipolar negative voltage pulse generator 1130feeding a PFN or PCN 1129 with a plurality of inductors and capacitorstuned to generate a resonance effect on the magnetically enhanced sourceas shown in FIGS. 35, 36. The resonance asymmetric varying AC pulse canbe in the range of 0.1-20 KW/cm2, the frequency in the range of 1 Hz-100KHz, the negative voltage can be in the range of 50-5000V, and thepositive voltage can be in the range of 10-5000V. The pulse width of theunipolar voltage pulse feeding the PFN or PCN 1129 can be in the rangeof 0.1-1000 microseconds. In some embodiments, the superimposedresonance asymmetric AC pulse can be a resonance symmetric AC pulse.

FIG. 48 (a) show the components of a high-power pulse generator 1130,which utilizes high-power regulated voltage source 1135 charging a pulsegenerator 1136 with programmable pulse frequency, pulse width, andvoltage level. The pulse generator 1136 produces negative unipolarvoltage pulses feeding a second PFN or pulse converter network (PCN)1129 with a plurality of inductors and capacitors arranged in aconfiguration with values to produce a desired pulsed output on themagnetically enhanced source 1137. In some embodiments, the pulsegenerator 1136 can have an isolated output utilizing a transformer and afull-wave diode bridge feeding a built in PFN to adjust voltagerise-time and fall-time. The output from the isolated pulse voltagegenerator feeds the second PFN or PCN 1129, which is connected to themagnetically enhanced source 1137. In some embodiments, the magneticallyenhanced source 1137 can be configured as shown in FIG. 36, in which themagnetic field directly coupled to the cusp field through the gap 1103,or FIG. 35, in which the magnetic field is directly coupled to the cuspfield through the gap 1103 and an inner magnetic assembly forming amagnetron configuration on the cathode target 1104. In some embodiments,a portion of the magnetic field 1111 can couple with the magnetic field1112. In some embodiments, an arc suppression circuit 1134 can beincluded. A voltage probe 1138 and current sensor 1141 are coupledbetween the second PFN or PCN 1129 and the magnetically enhanced source1137 to measure voltage and current on the magnetically enhanced source1137. These measurement signals are ultimately fed to themicrocontroller circuit 1139, which is controlled by a computer 1140.The data from these sensors can be used to determine peak pulse valuesand average value of either voltage or current. Peak power and averagepower can be calculated. The sensors can be used for over-voltage andover-current protection. The high-power pulse generator 1130 can beprogrammed to run in continuous mode or pulsed burst mode to prevent thecathode 1104 from thermal damage. The pulsed burst mode can beprogrammed to have a varying unipolar voltage level forcing the secondPFN or PCN 1129 to produce a varying resonance pulse output on themagnetically enhanced source 1137, thereby generating high densityplasma that is inductively current driven. The resonance asymmetricvarying AC pulse can be in the range of about 0.1-20 KW/cm2, thefrequency in the range of about 1 Hz-100 KHz, the negative voltage inthe range of about −50 to −5000V, and the positive voltage in the rangeof about 10 to 5000V. The pulse width of the unipolar voltage pulsefeeding the PFN can be in the range of about 0.1-1000 microseconds, andthe unipolar voltage pulse level can be in the range of about −50 to4000V. In some embodiments, the superimposed resonance asymmetric ACpulse can be a resonance symmetric AC pulse with variable peak voltagelevels.

FIG. 48 (b, c) show the input unipolar negative voltage pulses to a PFN1129 connected to the magnetically enhanced source as shown in FIGS. 35,36 with variable voltage levels in two different bursts f4 and f5. V7<V8and the output pulsed resonance asymmetric AC pulse is generated by ahigh-power regulated unipolar negative voltage pulse generator 1130feeding the PFN 1129 with a plurality of inductors and capacitors tunedto generate a resonance effect on the magnetically enhanced source asshown in FIGS. 35, 36 with variable peak voltage levels. The resonanceasymmetric varying AC pulse can be in the range of 0.1-20 KW/cm2, thefrequency in the range of 1 Hz-100 KHz, the negative voltage in therange of −50 to −5000V, and the positive voltage in the range of 10 to5000V. The pulse width of the unipolar voltage pulse feeding the PFN canbe in the range of 0.1-1000 microseconds and the unipolar voltage pulselevel can be in the range of −50 to −4000V. In some embodiments, thesuperimposed resonance asymmetric AC pulse can be a resonance symmetricAC pulse with variable peak voltage levels.

One or more embodiments disclosed herein, or a portion thereof, may makeuse of software running on a computer or workstation. By way of example,only and without limitation, FIG. 7 is a block diagram of an embodimentof a machine in the form of a computing system 900, within which is aset of instructions 902 that, when executed, cause the machine toperform any one or more of the methodologies according to embodiments ofthe invention. In one or more embodiments, the machine operates as astandalone device; in one or more other embodiments, the machine isconnected (e.g., via a network 922) to other machines. In a networkedimplementation, the machine operates in the capacity of a server or aclient user machine in a server-client user network environment.Exemplary implementations of the machine as contemplated by embodimentsof the invention include, but are not limited to, a server computer,client user computer, personal computer (PC), tablet PC, personaldigital assistant (PDA), cellular telephone, mobile device, palmtopcomputer, laptop computer, desktop computer, communication device,personal trusted device, web appliance, network router, switch orbridge, or any machine capable of executing a set of instructions(sequential or otherwise) that specify actions to be taken by thatmachine.

The computing system 900 includes a processing device(s) 904 (e.g., acentral processing unit (CPU), a graphics processing unit (GPU), orboth), program memory device(s) 906, and data memory device(s) 908,which communicate with each other via a bus 910. The computing system900 further includes display device(s) 912 (e.g., liquid crystal display(LCD), flat panel, solid state display, or cathode ray tube (CRT)). Thecomputing system 900 includes input device(s) 914 (e.g., a keyboard),cursor control device(s) 916 (e.g., a mouse), disk drive unit(s) 918,signal generation device(s) 920 (e.g., a speaker or remote control), andnetwork interface device(s) 924, operatively coupled together, and/orwith other functional blocks, via bus 910.

The disk drive unit(s) 918 includes machine-readable medium(s) 926, onwhich is stored one or more sets of instructions 902 (e.g., software)embodying any one or more of the methodologies or functions herein,including those methods illustrated herein. The instructions 902 mayalso reside, completely or at least partially, within the program memorydevice(s) 906, the data memory device(s) 908, and/or the processingdevice(s) 904 during execution thereof by the computing system 900. Theprogram memory device(s) 906 and the processing device(s) 904 alsoconstitute machine-readable media. Dedicated hardware implementations,such as but not limited to ASICs, programmable logic arrays, and otherhardware devices can likewise be constructed to implement methodsdescribed herein. Applications that include the apparatus and systems ofvarious embodiments broadly comprise a variety of electronic andcomputer systems. Some embodiments implement functions in two or morespecific interconnected hardware modules or devices with related controland data signals communicated between and through the modules, or asportions of an ASIC. Thus, the example system is applicable to software,firmware, and/or hardware implementations.

The term “processing device” as used herein is intended to include anyprocessor, such as, for example, one that includes a CPU (centralprocessing unit) and/or other forms of processing circuitry. Further,the term “processing device” may refer to more than one individualprocessor. The term “memory” is intended to include memory associatedwith a processor or CPU, such as, for example, RAM (random accessmemory), ROM (read only memory), a fixed memory device (for example,hard drive), a removable memory device (for example, diskette), a flashmemory and the like. In addition, the display device(s) 912, inputdevice(s) 914, cursor control device(s) 916, signal generation device(s)920, etc., can be collectively referred to as an “input/outputinterface,” and is intended to include one or more mechanisms forinputting data to the processing device(s) 904, and one or moremechanisms for providing results associated with the processingdevice(s). Input/output or I/O devices (including but not limited tokeyboards (e.g., alpha-numeric input device(s) 914, display device(s)912, and the like) can be coupled to the system either directly (such asvia bus 910) or through intervening input/output controllers (omittedfor clarity).

In an integrated circuit implementation of one or more embodiments ofthe invention, multiple identical die are typically fabricated in arepeated pattern on a surface of a semiconductor wafer. Each such diemay include a device described herein, and may include other structuresand/or circuits. The individual dies are cut or diced from the wafer,then packaged as integrated circuits. One skilled in the art would knowhow to dice wafers and package die to produce integrated circuits. Anyof the exemplary circuits or method illustrated in the accompanyingfigures, or portions thereof, may be part of an integrated circuit.Integrated circuits so manufactured are considered part of thisinvention.

An integrated circuit in accordance with the embodiments of the presentinvention can be employed in essentially any application and/orelectronic system in which buffers are utilized. Suitable systems forimplementing one or more embodiments of the invention include, but arenot limited, to personal computers, interface devices (e.g., interfacenetworks, high-speed memory interfaces (e.g., DDR3, DDR4), etc.), datastorage systems (e.g., RAID system), data servers, etc. Systemsincorporating such integrated circuits are considered part ofembodiments of the invention. Given the teachings provided herein, oneof ordinary skill in the art will be able to contemplate otherimplementations and applications.

In accordance with various embodiments, the methods, functions or logicdescribed herein is implemented as one or more software programs runningon a computer processor. Dedicated hardware implementations including,but not limited to, application specific integrated circuits,programmable logic arrays and other hardware devices can likewise beconstructed to implement the methods described herein. Further,alternative software implementations including, but not limited to,distributed processing or component/object distributed processing,parallel processing, or virtual machine processing can also beconstructed to implement the methods, functions or logic describedherein.

The embodiment contemplates a machine-readable medium orcomputer-readable medium containing instructions 902, or that whichreceives and executes instructions 902 from a propagated signal so thata device connected to a network environment 922 can send or receivevoice, video or data, and to communicate over the network 922 using theinstructions 902. The instructions 902 are further transmitted orreceived over the network 922 via the network interface device(s) 924.The machine-readable medium also contains a data structure for storingdata useful in providing a functional relationship between the data anda machine or computer in an illustrative embodiment of the systems andmethods herein.

While the machine-readable medium 902 is shown in an example embodimentto be a single medium, the term “machine-readable medium” should betaken to include a single medium or multiple media (e.g., a centralizedor distributed database, and/or associated caches and servers) thatstore the one or more sets of instructions. The term “machine-readablemedium” shall also be taken to include any medium that is capable ofstoring, encoding, or carrying a set of instructions for execution bythe machine and that cause the machine to perform anyone or more of themethodologies of the embodiment. The term “machine-readable medium”shall accordingly be taken to include, but not be limited to:solid-state memory (e.g., solid-state drive (SSD), flash memory, etc.);read-only memory (ROM), or other non-volatile memory; random accessmemory (RAM), or other re-writable (volatile) memory; magneto-optical oroptical medium, such as a disk or tape; and/or a digital file attachmentto e-mail or other self-contained information archive or set of archivesis considered a distribution medium equivalent to a tangible storagemedium. Accordingly, the embodiment is considered to include anyone ormore of a tangible machine-readable medium or a tangible distributionmedium, as listed herein and including art-recognized equivalents andsuccessor media, in which the software implementations herein arestored.

It should also be noted that software, which implements the methods,functions and/or logic herein, are optionally stored on a tangiblestorage medium, such as: a magnetic medium, such as a disk or tape; amagneto-optical or optical medium, such as a disk; or a solid-statemedium, such as a memory automobile or other package that houses one ormore read-only (non-volatile) memories, random access memories, or otherre-writable (volatile) memories. A digital file attachment to e-mail orother self-contained information archive or set of archives isconsidered a distribution medium equivalent to a tangible storagemedium. Accordingly, the disclosure is considered to include a tangiblestorage medium or distribution medium as listed herein and otherequivalents and successor media, in which the software implementationsherein are stored.

Although the specification describes components and functionsimplemented in the embodiments with reference to particular standardsand protocols, the embodiments are not limited to such standards andprotocols.

The illustrations of embodiments described herein are intended toprovide a general understanding of the structure of various embodiments,and they are not intended to serve as a complete description of all theelements and features of apparatus and systems that might make use ofthe structures described herein. Many other embodiments will be apparentto those of skill in the art upon reviewing the above description. Otherembodiments are utilized and derived therefrom, such that structural andlogical substitutions and changes are made without departing from thescope of this disclosure. Figures are also merely representational andare not drawn to scale. Certain proportions thereof are exaggerated,while others are decreased. Accordingly, the specification and drawingsare to be regarded in an illustrative rather than a restrictive sense.

Such embodiments are referred to herein, individually and/orcollectively, by the term “embodiment” merely for convenience andwithout intending to voluntarily limit the scope of this application toany single embodiment or inventive concept if more than one is in factshown. Thus, although specific embodiments have been illustrated anddescribed herein, it should be appreciated that any arrangementcalculated to achieve the same purpose are substituted for the specificembodiments shown. This disclosure is intended to cover any and alladaptations or variations of various embodiments. Combinations of theabove embodiments, and other embodiments not specifically describedherein, will be apparent to those of skill in the art upon reviewing theabove description.

In the foregoing description of the embodiments, various features aregrouped together in a single embodiment for the purpose of streamliningthe disclosure. This method of disclosure is not to be interpreted asreflecting that the claimed embodiments have more features than areexpressly recited in each claim. Rather, as the following claimsreflect, inventive subject matter lies in less than all features of asingle embodiment. Thus, the following claims are hereby incorporatedinto the detailed description, with each claim standing on its own as aseparate example embodiment.

The abstract is provided to comply with 37 C.F.R. § 1.72(b), whichrequires an abstract that will allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. In addition, in the foregoing DetailedDescription, it can be seen that various features are grouped togetherin a single embodiment for the purpose of streamlining the disclosure.This method of disclosure is not to be interpreted as reflecting anintention that the claimed embodiments require more features than areexpressly recited in each claim. Rather, as the following claimsreflect, inventive subject matter lies in less than all features of asingle embodiment. Thus, the following claims are hereby incorporatedinto the Detailed Description, with each claim standing on its own asseparately claimed subject matter.

Although specific example embodiments have been described, it will beevident that various modifications and changes are made to theseembodiments without departing from the broader scope of the inventivesubject matter described herein. Accordingly, the specification anddrawings are to be regarded in an illustrative rather than a restrictivesense. The accompanying drawings that form a part hereof, show by way ofillustration, and without limitation, specific embodiments in which thesubject matter are practiced. The embodiments illustrated are describedin sufficient detail to enable those skilled in the art to practice theteachings herein. Other embodiments are utilized and derived therefrom,such that structural and logical substitutions and changes are madewithout departing from the scope of this disclosure. This DetailedDescription, therefore, is not to be taken in a limiting sense, and thescope of various embodiments is defined only by the appended claims,along with the full range of equivalents to which such claims areentitled.

Given the teachings provided herein, one of ordinary skill in the artwill be able to contemplate other implementations and applications ofthe techniques of the disclosed embodiments. Although illustrativeembodiments have been described herein with reference to theaccompanying drawings, it is to be understood that these embodiments arenot limited to the disclosed embodiments, and that various other changesand modifications are made therein by one skilled in the art withoutdeparting from the scope of the appended claims.

What is claimed is:
 1. A method of sputtering a layer on a substrateusing a high-energy density plasma (HEDP) magnetron, the methodcomprising: positioning the HEDP magnetron in a vacuum with an anode, acathode target, a magnet assembly, the substrate, and a feed gas;applying a plurality of unipolar negative direct current (DC) voltagepulses from a pulse power supply to a pulse converting network (PCN),the PCN comprising at least one inductor and at least one capacitor; andadjusting an amplitude and a frequency associated with the plurality ofunipolar negative DC voltage pulses causing a resonance mode associatedwith the PCN, the PCN converting the unipolar negative DC voltage pulsesto an asymmetric alternating current (AC) signal that generates ahigh-density plasma discharge on the HEDP magnetron with pulse currentdensities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signaloperatively coupled to the cathode target, the asymmetric AC signalcomprising a first negative voltage and a positive voltage followed by asecond negative voltage, the second negative voltage generating plasmafor use during a subsequent first negative voltage, an increase inamplitude or pulse duration of the plurality of unipolar negative DCvoltage pulses causing an increase in amplitude of at least one of thenegative voltages of the asymmetric AC signal in response to the PCNbeing in the resonance mode, thereby causing sputtering dischargeassociated with the HEDP magnetron to form the layer from the cathodetarget on the substrate.
 2. The method, as defined by claim 1, furthercomprising applying a negative bias voltage to the substrate, therebyattracting positively charged ions sputtered from the cathode target tothe substrate, a value of the negative bias voltage being in a range ofabout 10 V to 500 V.
 3. The method, as defined by claim 1, wherein thecathode target comprises a hollow shape.
 4. The method, as defined byclaim 1, wherein the feed gas comprises a noble gas, the noble gascomprising at least one of Ar, Ne, Kr, Xe, He.
 5. The method, as definedby claim 1, wherein the feed gas comprises a mixture of a noble gas anda reactive gas, the reactive gas being reactive with atoms associatedwith the cathode target.
 6. The method, as defined by claim 1, whereinthe feed gas comprises a mixture of a noble gas and a gas comprisingatoms associated with the cathode target.
 7. The method as defined byclaim 1, wherein the cathode target comprises a flat shape.
 8. Themethod, as defined by claim 1, further comprising rotating the cathodetarget at a speed in a range of about 1 to 400 revolutions per minute.9. The method, as defined by claim 1, wherein the cathode targetcomprises at least one of the following elements: B, C, Al, Si, P, S,Ga, Ge, As, Se, In, Sn, Sb, Te, I, Tl, Pb, Bi, Sc, Ti, Cr, Mn, Fe, Co,Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Lu, Hf, Ta, W, Re,Os, Ir, Pt, Au, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,Be, Mg, Ca, Sr, B a.
 10. The method, as defined by claim 1, wherein thesubstrate comprises at least one of a portion of an automotive engine,valve, injector head, crank shaft, bushing, bearing, sprocket, cellphone, mobile phone, iPhone, iPod, touch screen, cutting tool, drillbit, insert for cutting tool, semiconductor wafer with a diameter in arange of about 25 mm to 450 mm, razor blade, film used to manufacture anelectronic memory device, RAM, PCRAM, ReRam.
 11. The method, as definedby claim 1, wherein the first negative voltage comprises a firstamplitude and the second negative voltage comprises a second amplitude,the second amplitude being less than the first amplitude.
 12. Anapparatus that sputters a layer on a substrate using a high-energydensity plasma (HEDP) magnetron, the apparatus comprising: a HEDPmagnetron configured to be positioned in a vacuum with an anode, acathode target, a magnet assembly, the substrate, and a feed gas; apulse power supply, the pulse power supply providing a plurality ofunipolar negative direct current (DC) voltage pulses; and a pulseconverting network (PCN) comprising at least one inductor and at leastone capacitor configured to cause a resonance discharge between thepulse power supply and the HEDP magnetron, the PCN converting theunipolar negative DC voltage pulses to an asymmetric alternating current(AC) signal that generates a high-density plasma discharge on the HEDPmagnetron with pulse current densities in a range of about 0.1 to 20A/cm2, an amplitude and a frequency of a plurality of unipolar negativeDC voltage pulses adjusted to cause a resonance mode associated with thePCN, the asymmetric AC signal operatively coupled to the cathode target,the asymmetric AC signal comprising a first negative voltage and apositive voltage followed by a second negative voltage, the secondnegative voltage generating plasma for use during a subsequent firstnegative voltage, an increase in amplitude or pulse duration of theplurality of unipolar negative DC voltage pulses causing an increase inamplitude of at least one of the negative voltages of the asymmetric ACsignal in response to the PCN being in the resonance mode, therebycausing sputtering discharge associated with the HEDP magnetron to formthe layer from the cathode target on the substrate.
 13. The apparatus,as defined by claim 12, further comprising a negative bias voltage powersupply, the negative bias voltage power supply operatively coupling anegative bias voltage to the substrate, thereby attracting positivelycharged ions sputtered from the cathode target to the substrate, a valueof the negative bias voltage being in a range of about 10 V to 500 V.14. The apparatus, as defined by claim 12, wherein the cathode targetcomprises a hollow shape
 15. The apparatus, as defined by claim 12,wherein a value of a magnetic field disposed parallel to a surface ofthe cathode target is in a range of about 150 to 1000 G.
 16. Theapparatus, as defined by claim 12, wherein the feed gas comprises anoble gas, the noble gas comprising at least one of He, Ar, Kr, Xe, Ne.17. The apparatus, as defined by claim 12, wherein the feed gascomprises a mixture of a noble gas and a reactive gas, the reactive gasbeing reactive with atoms associated with the cathode target.
 18. Theapparatus, as defined by claim 12, wherein the feed gas comprises amixture of a noble gas and a gas comprising atoms associated with thecathode target.
 19. The apparatus, as defined by claim 12, wherein thecathode target comprises a flat shape.
 20. The apparatus, as defined byclaim 12, further comprising a magnet assembly, the magnet assemblyrotating at a speed in a range of about 1 to 400 revolutions per minute.21. The apparatus, as defined by claim 12, wherein the first negativevoltage comprises a first amplitude and the second negative voltagecomprises a second amplitude, the second amplitude being less than thefirst amplitude.
 22. A computer-readable medium storing instructionsthat, when executed by a processing device, perform a method ofsputtering a layer on a substrate using a high-energy density plasma(HEDP) magnetron comprising: positioning the HEDP magnetron in a vacuumwith an anode, a cathode target, a magnet assembly, the substrate, and afeed gas; applying a plurality of unipolar negative direct current (DC)voltage pulses from a pulse power supply to a pulse converting network(PCN), the PCN comprising at least one inductor and at least onecapacitor; and adjusting an amplitude and a frequency associated withthe plurality of unipolar negative DC voltage pulses causing a resonancemode associated with the PCN, the PCN converting the unipolar negativeDC voltage pulses to an asymmetric alternating current (AC) signal thatgenerates a high-density plasma discharge on the HEDP magnetron withpulse current densities in a range of about 0.1 to 20 A/cm2, theasymmetric AC signal operatively coupled to the cathode target, theasymmetric AC signal comprising a first negative voltage and a positivevoltage followed by a second negative voltage, the second negativevoltage generating plasma for use during a subsequent first negativevoltage, an increase in amplitude or pulse duration of the plurality ofunipolar negative DC voltage pulses causing an increase in amplitude ofat least one of the negative voltages of the asymmetric AC signal inresponse to the PCN being in the resonance mode, thereby causingsputtering discharge associated with the HEDP magnetron to form thelayer from the cathode target on the substrate.
 23. Thecomputer-readable medium, as defined by claim 22, wherein the firstnegative voltage comprises a first amplitude and the second negativevoltage comprises a second amplitude, the second amplitude being lessthan the first amplitude.